公开(公告)号：US10950754B2

公开(公告)日：2021-03-16

申请号：US16474197

申请日：2017-12-27

Applicant: LG INNOTEK CO., LTD.

Inventor： Woong Sun Yum ,  Hyun Ju Kim ,  Jin Soo Park ,  Seung Il Lee ,  Jae Young Im

IPC: H01L33/38 ,  H01L33/30 ,  H01L33/40

Abstract: An embodiment discloses a semiconductor device comprising: a light-emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed below the second conductive semiconductor layer; and a current blocking layer disposed between the second conductive semiconductor layer and the second electrode, wherein the first conductive semiconductor layer includes a first region in which the first electrode is disposed and a second region, the thickness of which is less than the thickness of the first region, and the current blocking layer is disposed in a region corresponding to the first region in the thickness direction.

公开(公告)号：US10270009B2

公开(公告)日：2019-04-23

申请号：US15752926

申请日：2016-08-18

Applicant: LG INNOTEK CO., LTD.

Inventor： Dae Hee Lee ,  Young Hoon Kim ,  Jung Hwan Son ,  Seung Il Lee ,  Jung Wook Lee ,  Jae Young Im

IPC: H01L33/20 ,  H01L33/26 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: Disclosed in an embodiment is a light emitting device comprising: a light-emitting structure having a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer; a first contact layer disposed under the light-emitting structure; a reflective layer disposed under the first contact layer; a first electrode layer including a capping layer disposed under the reflective layer; a second electrode layer electrically connected with the first semiconductor layer; a protective layer disposed at the outer peripheral portion between the capping layer and the light-emitting structure; a barrier layer at an outer side of the reflective layer and made of a metal different from that of the reflective layer; and a support member disposed under the capping layer.