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1.
公开(公告)号:US20240334832A1
公开(公告)日:2024-10-03
申请号:US18574080
申请日:2022-02-25
IPC分类号: H10N10/817 , H10N10/01 , H10N10/82 , H10N10/851
CPC分类号: H10N10/817 , H10N10/01 , H10N10/82 , H10N10/8556
摘要: A thermoelectric conversion element includes a first electrode, a thermoelectric conversion material portion configured to convert heat into electricity, an intermediate layer arranged on the thermoelectric conversion material portion, a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer, and a second electrode connected to the thermoelectric conversion material portion. The intermediate layer includes a first layer arranged on the thermoelectric conversion material portion and containing a dopant, and a second layer arranged on the first layer and configured to suppress diffusion of elements. The intermediate layer has an interface resistivity of not less than 0.0001 mΩcm2 and not more than 0.5 mΩcm2.
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公开(公告)号:US12078519B2
公开(公告)日:2024-09-03
申请号:US18352767
申请日:2023-07-14
发明人: Robert Higashi , Scott Edward Beck , Yong-Fa Wang , Ian Bentley , Bill Hoover
IPC分类号: G01F1/688 , G01F1/684 , H10N10/851 , H10N19/00
CPC分类号: G01F1/6888 , G01F1/6847 , H10N10/851 , H10N19/00
摘要: Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.
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公开(公告)号:US20230358586A1
公开(公告)日:2023-11-09
申请号:US18352767
申请日:2023-07-14
发明人: Robert Higashi , Scott Edward Beck , Yong-Fa Wang , Ian Bentley , Bill Hoover
IPC分类号: G01F1/688 , G01F1/684 , H10N10/851 , H10N19/00
CPC分类号: G01F1/6888 , G01F1/6847 , H10N10/851 , H10N19/00
摘要: Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.
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公开(公告)号:US20230309407A1
公开(公告)日:2023-09-28
申请号:US18327935
申请日:2023-06-02
发明人: MASAKI FUJIKANE , KOUHEI TAKAHASHI , NAOKI TAMBO , YASUYUKI NAITO
IPC分类号: H10N10/851 , H10N10/17 , H10N10/82 , G01J5/14 , G01J5/22
CPC分类号: H10N10/8556 , H10N10/17 , H10N10/82 , G01J5/14 , G01J5/22
摘要: An infrared sensor includes a base substrate, an infrared light receiver, and a beam. The beam includes a separated portion separated from the base substrate to be suspended above the base substrate. The beam is connected at the separated portion to the infrared light receiver. The beam includes a p-type portion containing a p-type semiconductor and an n-type portion containing an n-type semiconductor. The p-type portion has a first three-dimensional structure including first recesses and a first solid portion formed between the first recesses. The first solid portion has, between the first recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The n-type portion has a second three-dimensional structure including second recesses and a second solid portion formed between the second recesses. The second solid portion has, between the second recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The beam satisfies at least one of following conditions (Ia) or (IIa): (Ia) the first solid portion includes a first portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a first reference sample that is made of a material of a type identical to a type of a material constituting the first solid portion and that does not have recesses; and (IIa) the second solid portion includes a second portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a second reference sample that is made of a material of a type identical to a type of a material constituting the second solid portion and that does not have recesses.
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公开(公告)号:US12102005B2
公开(公告)日:2024-09-24
申请号:US17993195
申请日:2022-11-23
IPC分类号: H10N10/13 , H01J45/00 , H10N10/851 , H10N10/853 , H10N10/855
CPC分类号: H10N10/13 , H01J45/00 , H10N10/851 , H10N10/853 , H10N10/855
摘要: A thermionic energy converter, preferably including an anode and a cathode. An anode of a thermionic energy converter, preferably including an n-type semiconductor, one or more supplemental layers, and an electrical contact. A method for work function reduction and/or thermionic energy conversion, preferably including inputting thermal energy to a thermionic energy converter, illuminating an anode of the thermionic energy converter, thereby preferably reducing a work function of the anode, and extracting electrical power from the system.
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公开(公告)号:US20240231173A1
公开(公告)日:2024-07-11
申请号:US18094716
申请日:2023-01-09
IPC分类号: G02F1/21 , F25B21/04 , G02F1/225 , H10N10/17 , H10N10/851 , H10N10/852
CPC分类号: G02F1/212 , F25B21/04 , G02F1/2257 , H10N10/17 , H10N10/852 , H10N10/8556 , G02F2202/10 , G02F2203/50
摘要: Structures including an optical phase shifter and methods of forming a structure including an optical phase shifter. The structure comprises an optical phase shifter including a waveguide core having a first branch and a second branch laterally spaced from the first branch. The structure further comprises a thermoelectric device including a first plurality of pillars and a second plurality of pillars that alternate with the first plurality of pillars in a series circuit. The first plurality of pillars and the second plurality of pillars disposed adjacent to the first branch of the waveguide core, the first plurality of pillars comprises an n-type semiconductor material, and the second plurality of pillars comprises a p-type semiconductor material.
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公开(公告)号:US20240155946A1
公开(公告)日:2024-05-09
申请号:US18281962
申请日:2022-11-16
申请人: WUHAN UNIVERSITY
发明人: Ziyu WANG , Xingzhong ZHANG , Yong LIU , Wei WU , Xiaosa LIANG , Rui XIONG
IPC分类号: H10N10/17 , H10N10/01 , H10N10/817 , H10N10/851 , H10N10/852
CPC分类号: H10N10/17 , H10N10/01 , H10N10/817 , H10N10/852 , H10N10/8556
摘要: A thermoelectric array display and a manufacturing method thereof are provided. The thermoelectric array display includes at least a first pixel, where the first pixel includes a bottom electrode, a P-type thermoelectric leg, an N-type thermoelectric leg, and a top electrode; the P-type thermoelectric leg is arranged on the bottom electrode; and the P-type thermoelectric leg is connected in series to the N-type thermoelectric leg by the top electrode. The thermoelectric array display has strong concealment of information transmission, can effectively reduce heat generation of a device, and can implement long-distance signal transmission.
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8.
公开(公告)号:US20230326712A1
公开(公告)日:2023-10-12
申请号:US18020876
申请日:2020-08-11
申请人: XIAMEN UNIVERSITY
发明人: Honggang LIAO
IPC分类号: H01J37/26 , H10N10/852 , G01N23/04 , H01L23/38 , H10N10/82 , H01J37/20 , H10N10/851
CPC分类号: H01J37/26 , G01N23/04 , H01J37/20 , H01L23/38 , H10N10/82 , H10N10/852 , H10N10/8556
摘要: A transmission electron microscope high-resolution in situ fluid freezing chip includes a lower chip and an upper chip. The lower chip is provided with a support layer, a freezing layer, an insulating layer, an opening, and a center window. The freezing layer is provided with contact electrodes, semiconductor films, and a conductive metal film. The center window is surrounded by the conductive metal film; the contact electrodes are disposed at an edge of the chip. One ends of the semiconductor films are lapped on the conductive metal film, and the other ends are lapped on the electrodes. In the outer edge of the conductive metal film, silicon is etched to form the opening. The support layer covers the opening. The conductive metal film is disposed on the support layer. A plurality of holes are provided in the center window.
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公开(公告)号:US11716905B2
公开(公告)日:2023-08-01
申请号:US16449838
申请日:2019-06-24
发明人: Hyejin Moon , Ali Farzbod
IPC分类号: H10N10/857 , H10N10/00 , H10N10/85 , H10N15/00 , H10N10/851 , H10N15/10 , B01J31/02 , H01G9/20
CPC分类号: H10N10/857 , B01J31/0277 , B01J31/0298 , B01J2219/00047 , H01G9/2013 , H10N10/00 , H10N10/85 , H10N10/851 , H10N15/00 , H10N15/10
摘要: An electrochemical cell comprises a first electrode having a first inner surface; a second electrode having a second inner surface, the second inner surface facing the first inner surface; a nanostructured material positioned on at least one of the first inner surface and second inner surface; and an ionic liquid positioned between the first inner surface and the second inner surface, the ionic liquid being in electrical communication with the first electrode and second electrode.
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10.
公开(公告)号:US20230183844A1
公开(公告)日:2023-06-15
申请号:US17999050
申请日:2021-05-17
申请人: TOSOH CORPORATION
发明人: Ryo AKIIKE , Yoichiro KODA , Masami MESUDA
IPC分类号: C22C30/00 , C22C24/00 , H10N10/851 , C01B33/06
CPC分类号: C22C30/00 , C22C24/00 , H10N10/8556 , C01B33/06 , C22C2202/02 , C01P2006/40 , C01P2006/32 , C01P2002/60
摘要: A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.
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