公开(公告)号：US20040142516A1

公开(公告)日：2004-07-22

申请号：US10756378

申请日：2004-01-14

Applicant: LG. Philips LCD Co., Ltd.

Inventor： Jae Gab Lee ,  Heung Lyul Cho

IPC: H01L021/00

CPC classification number: H01L29/66765 ,  H01L29/4908 ,  Y10S438/927

Abstract: A thin film transistor and a method of manufacturing the same includes forming a copper alloy line on substrate, an oxidation film formed on the upper surface of the copper alloy line. The copper alloy line includes a concentration y of magnesium, and the copper alloy line has a thickness t. the concentration y of magnesium in copper alloy line is related to the thickness is as follows: 1 y null 94 t

Abstract translation: 薄膜晶体管及其制造方法包括在基板上形成铜合金线，形成在铜合金线的上表面上的氧化膜。 铜合金线包含镁的浓度y，铜合金线的厚度为t。 铜合金线中镁的浓度y与厚度有关如下： 1 $ y ≤ 94 PDF内容 加载中... Patent Agency Ranking Scan to Join $