公开(公告)号：US20030183820A1

公开(公告)日：2003-10-02

申请号：US10396333

申请日：2003-03-26

Applicant: LG. Philips LCD Co., Ltd.

Inventor： Yong-In Park ,  Sang-Gul Lee ,  Jae-Beom Choi ,  Jong-Hoon Yi

IPC: H01L029/76

CPC classification number: H01L27/124 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/66765

Abstract: A thin film transistor having a source/drain electrode on an insulating substrate is provided with a metal oxide layer interposed between a source/drain electrode and a metal connecting line. The formation of the metal oxide layer prevents the occurrence of the galvanic phenomenon.