公开(公告)号：US20020038626A1

公开(公告)日：2002-04-04

申请号：US09965844

申请日：2001-10-01

Applicant: LG.PHILIPS LCD CO., LTD.

Inventor： Se-Jin Chung

IPC: C30B028/12 ,  C30B001/00 ,  C30B003/00 ,  C30B005/00 ,  C30B028/14 ,  C30B028/02 ,  C30B023/00 ,  C30B025/00

CPC classification number: C30B29/06 ,  C30B13/00 ,  Y10T117/10

Abstract: A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.

Abstract translation: 一种使非晶硅层结晶的方法包括以下步骤：产生具有第一能量密度和第二能量密度的准分子激光束，用准分子的至少一次曝光照射非晶硅层，其中第一能量密度熔化无定​​形 硅层从非晶硅层的表面到第一厚度的第一深度，第二能量密度将非晶硅层熔融到比非晶硅层的表面小于第一厚度的第二深度。