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    SEMICONDUCTOR WAFERS RECRYSTALLIZED IN A PARTIALLY SURROUNDING THIN FILM CAPSULE
    8.
    发明申请
    SEMICONDUCTOR WAFERS RECRYSTALLIZED IN A PARTIALLY SURROUNDING THIN FILM CAPSULE 有权
    半导体晶片在部分环绕薄膜中重新形成

    公开(公告)号：US20140124963A1

    公开(公告)日：2014-05-08

    申请号：US14155546

    申请日：2014-01-15

    申请人： Massachusetts Institute of Technology

    发明人： Emanuel M Sachs ,  James G. Serdy ,  Eerik T. Hantsoo

    IPC分类号： C30B13/00 ,  H01L23/31 ,  H01L29/04

    CPC分类号： C30B13/00 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02667 ,  H01L23/3171 ,  H01L29/04 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.

    摘要翻译： 原始晶片（通常为硅）具有期望的端部PV晶片的形式。 原件可以通过快速凝固或CVD制成。 它有小颗粒。 它被封装在干净的薄膜中，其在再结晶时含有并保护硅以产生更大的晶粒结构。 胶囊可以通过在氧气或蒸汽的存在下加热晶片来制造，从而在外表面上产生二氧化硅，通常为1-2微米。 至少一个支撑元件在胶囊被提供时支撑晶片，并且仅阻挡与成膜气氛接触的最小表面积。 可以存在多个支撑元件，或者表面可以提供这样的支撑。 胶囊在再结晶期间含有熔融材料，防止杂质。 重结晶可能在空气中。 重结晶后，除去胶囊。

    Recrystallization of semiconductor wafers in a thin film capsule and related processes
    9.
    发明授权
    Recrystallization of semiconductor wafers in a thin film capsule and related processes 有权
    半导体晶片在薄膜胶囊中的重结晶及相关工艺

    公开(公告)号：US08633483B2

    公开(公告)日：2014-01-21

    申请号：US12665495

    申请日：2008-06-26

    申请人： Emanuel M. Sachs ,  James G. Serdy ,  Eerik T. Hantsoo

    发明人： Emanuel M. Sachs ,  James G. Serdy ,  Eerik T. Hantsoo

    IPC分类号： H01L29/04

    CPC分类号： C30B13/00 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02667 ,  H01L23/3171 ,  H01L29/04 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. Further heating creates a molten zone in space, through which the wafer travels, resulting in recrystallization with a larger grain size. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. Thermal transfer through backing plates minimizes stresses and defects. After recrystallization, the capsule is removed.

    摘要翻译： 原始晶片（通常为硅）具有期望的端部PV晶片的形式。 原件可以通过快速凝固或CVD制成。 它有小颗粒。 它被封装在干净的薄膜中，其在再结晶时含有并保护硅以产生更大的晶粒结构。 胶囊可以通过在氧气或蒸汽的存在下加热晶片来制造，从而在外表面上产生二氧化硅，通常为1-2微米。 进一步的加热在空间中产生熔融区，晶片经过该熔融区，导致晶粒尺寸更大的再结晶。 胶囊在再结晶期间含有熔融材料，防止杂质。 重结晶可能在空气中。 通过背板进行热转印可最大限度地减少应力和缺陷。 重结晶后，除去胶囊。

    METHOD FOR GROWING II-VI SEMICONDUCTOR CRYSTALS AND II-VI SEMICONDUCTOR LAYERS
    10.
    发明申请
    METHOD FOR GROWING II-VI SEMICONDUCTOR CRYSTALS AND II-VI SEMICONDUCTOR LAYERS 审中-公开
    用于生长II-VI半导体晶体和II-VI半导体层的方法

    公开(公告)号：US20130068156A1

    公开(公告)日：2013-03-21

    申请号：US13700546

    申请日：2011-05-30

    申请人： Alex Fauler

    发明人： Alex Fauler

    IPC分类号： B01J19/00

    CPC分类号： B01J19/002 ,  C30B11/00 ,  C30B13/00 ,  C30B15/00 ,  C30B25/02 ,  C30B29/48

    摘要： A method for growing II-VI semiconductor crystals and II-VI semiconductor layers as well as crystals and layers of their ternary or quaternary compounds from the liquid or gas phase is proposed. To this end, the solid starting materials are introduced into a growing chamber for the growing of crystals. Inside the growing chamber, carbon monoxide is supplied by way of reducing agent. At least certain zones of the growing chamber are heated to a temperature at which a first-order phase transition of the starting materials takes place and the starting materials pass into the liquid or gas phase. The starting materials are then cooled down accompanied by the formation of a semiconductor crystal or semiconductor layer, again with a first-order phase transition taking place. The oxygen present in the growing chamber is bound by the carbon monoxide and the formation of an oxide layer at the phase boundary of the growing semiconductor crystal or semiconductor layer is prevented.

    摘要翻译： 提出了一种用于从液相或气相生长II-VI半导体晶体和II-VI半导体层以及其三元或四元化合物的晶体和层的方法。 为此，将固体原料引入生长室中，以生长晶体。 在生长室内，通过还原剂供给一氧化碳。 将生长室的至少某些区域加热至起始材料的一阶相变发生并且起始材料进入液相或气相的温度。 然后，随着半导体晶体或半导体层的形成，首先冷却起始材料，再次发生一次相变。 存在于生长室中的氧被一氧化碳结合，并且防止在生长半导体晶体或半导体层的相边界处形成氧化物层。