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公开(公告)号：US20240136384A1
公开(公告)日：2024-04-25
申请号：US18275174
申请日：2022-02-01
IPC分类号： H01L27/146 , H01L31/0304 , H01L31/0352
CPC分类号： H01L27/14649 , H01L31/03046 , H01L31/035236
摘要： A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.
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公开(公告)号：US20240113241A1
公开(公告)日：2024-04-04
申请号：US18265654
申请日：2021-11-26
发明人： Axel EVIRGEN , Jean-Luc REVERCHON
IPC分类号： H01L31/0352 , H01L27/146 , H01L31/0304 , H01L31/09
CPC分类号： H01L31/035236 , H01L27/14649 , H01L31/03046 , H01L31/09
摘要： A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.
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公开(公告)号：US20240234473A9
公开(公告)日：2024-07-11
申请号：US18275174
申请日：2022-02-01
IPC分类号： H01L27/146 , H01L31/0304 , H01L31/0352
CPC分类号： H01L27/14649 , H01L31/03046 , H01L31/035236
摘要： A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.
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公开(公告)号：US20230016835A1
公开(公告)日：2023-01-19
申请号：US17787328
申请日：2020-12-17
IPC分类号： H01L31/109 , H01L31/18 , H01L31/0304
摘要： A radiation detector includes a stack of layers along a direction Z, the stack comprising: an absorbent layer, a first contact layer, an assembly consisting of at least one intermediate layer, referred to as an intermediate assembly, an upper layer, the first contact layer and the upper layer having a plurality of detection zones and separation zones, a detection zone corresponding to a pixel of the detector, a passivation layer made from a dielectric material, arranged on the upper layer and having openings at the level of the detection zones of the upper layer, the semiconductor layers of the stack being compounds based on elements of groups IIIA and VA of the periodic table of the elements, the second material comprising the VA element antimony and the third material not comprising the VA element antimony.
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公开(公告)号：US20210288095A1
公开(公告)日：2021-09-16
申请号：US17258089
申请日：2019-06-21
IPC分类号： H01L27/146
摘要： An optical detector that is sensitive in at least two infrared wavelength ranges: first spectral band and second spectral band; and having a set of pixels, comprising: an absorbent structure disposed on a lower face of a substrate and comprising a stack of at least one absorbent layer made of semi-conductor material; the detector further comprising a plurality of dielectric resonators on the upper surface of said substrate forming an upper surface metasurface, the metasurface configured to diffuse, deflect and focus in the pixels of the detector in a resonant manner, when illuminated by the incident light, a first beam having at least one first wavelength included in the first spectral band and a second beam having at least one second wavelength included in the second band, the metasurface also being configured so that said first and second beams are focused on different pixels of the detector.
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6.发明申请公开(公告)号：US20200373455A1
公开(公告)日：2020-11-26
申请号：US16635480
申请日：2018-07-30
IPC分类号： H01L31/18 , H01L31/103
摘要： A process for fabricating a hybrid optical detector, includes the steps of: assembling, via an assembly layer, on the one hand an absorbing structure and on the other hand a read-out circuit, locally etching, through the absorbing structure, the assembly layer and the read-out circuit up to the contacts, so as to form electrical via-holes, depositing a protective layer on the walls of the via-holes, producing a doped region of a second doping type different from the first doping type by diffusing a dopant into the absorbing structure through the protective layer, the region extending annularly around the via-holes so as to form a diode, depositing a metallization layer on the walls of the via-holes allowing the doped region to be electrically connected to the contact.
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