公开(公告)号：US20210257195A1

公开(公告)日：2021-08-19

申请号：US17302622

申请日：2021-05-07

Applicant: Lam Research Corporation

Inventor： John Stephen DREWERY ,  Tom A. KAMP ,  Haoquan YAN ,  John Edward DAUGHERTY ,  Ali Sucipto TAN ,  Ming-Kuei TSENG ,  Bruce FREEMAN

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.