公开(公告)号：US20240213089A1

公开(公告)日：2024-06-27

申请号：US18556978

申请日：2022-04-20

申请人： Lam Research Corporation

发明人： Navaneetha Krishnan SUBBAIYAN ,  Patrick LITTLE ,  Daniel Mark DINNEEN ,  Shantinath GHONGADI

IPC分类号： H01L21/768 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677

CPC分类号： H01L21/76862 ,  H01J37/32376 ,  H01J37/3244 ,  H01J37/32825 ,  H01L21/67167 ,  H01L21/6723 ,  H01L21/67745 ,  H01L21/76873 ,  H01L21/02068

摘要： An atmospheric plasma treatment station is integrated in a semiconductor process tool. The atmospheric plasma treatment station directly interfaces with a deposition chamber of the semiconductor process tool without adding to the footprint or form factor of the semiconductor process tool. The atmospheric plasma treatment station includes a movable atmospheric plasma source such as a linear head for scanning across a surface of a substrate. The atmospheric plasma treatment station provides an enclosed space in a controlled environment with non-reactive gas flowing through the enclosed space. Process gases may be supplied to the linear head based on a surface condition of the substrate being treated.