公开(公告)号：US20160370796A1

公开(公告)日：2016-12-22

申请号：US14860078

申请日：2015-09-21

申请人： Lam Research Corporation

发明人： Marcus Musselman ,  Juan Valdivia, III ,  Hua Xiang ,  Andrew D. Bailey, III ,  Yoko Yamaguchi ,  Qian Fu ,  Aaron Eppler

IPC分类号： G05B19/418

摘要： A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.

摘要翻译： 公开了一种用于控制晶片处理室的状态的系统。 根据本公开的原理，系统包括存储器和第一控制器。 存储器存储多个第一控制元件中的各个的多个简档。 多个第一控制元件布置在整个室中。 第一控制器确定与多个第一控制元件相关联的衬底处理参数中的不均匀性。 基板处理参数不同于室的状态。 第一控制器基于衬底处理参数中的不均匀性和衬底处理参数对条件的灵敏度来调整多个轮廓中的至少一个。

公开(公告)号：US10763142B2

公开(公告)日：2020-09-01

申请号：US14860078

申请日：2015-09-21

申请人： Lam Research Corporation

发明人： Marcus Musselman ,  Juan Valdivia, III ,  Hua Xiang ,  Andrew D. Bailey, III ,  Yoko Yamaguchi ,  Qian Fu ,  Aaron Eppler

IPC分类号： G05B19/418 ,  H01L21/67

摘要： A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.