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    Silicon oxide silicon nitride stack stair step etch
    1.
    发明授权
    Silicon oxide silicon nitride stack stair step etch 有权

    公开(公告)号：US11646207B2

    公开(公告)日：2023-05-09

    申请号：US16766256

    申请日：2018-11-29

    申请人： Lam Research Corporation

    发明人： Ce Qin ,  Zhongkui Tan ,  Qian Fu ,  Sam Do Lee

    IPC分类号： H01L21/3065 ,  H01L21/311

    CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/31144

    摘要： A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiO2 layer and etching a SiN layer. Etching a SiO2 layer comprises flowing a SiO2 etching gas into the plasma processing chamber, wherein the SiO2 etching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SF6 and NF3, generating a plasma from the SiO2 etching gas, providing a bias, and stopping the SiO2 layer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.

    Spacer profile control using atomic layer deposition in a multiple patterning process
    2.
    发明授权
    Spacer profile control using atomic layer deposition in a multiple patterning process 有权

    公开(公告)号：US10446394B2

    公开(公告)日：2019-10-15

    申请号：US15881506

    申请日：2018-01-26

    申请人： Lam Research Corporation

    发明人： Mirzafer Abatchev ,  Qian Fu ,  Yoko Yamaguchi ,  Aaron Eppler

    IPC分类号： H01L21/033 ,  H01L21/02 ,  H01L21/311

    摘要： Methods and apparatuses for spacer profile control using atomic layer deposition (ALD) in multi-patterning processes are described herein. A silicon oxide spacer is deposited over a patterned core material and a target layer of a substrate in a multi-patterning scheme. A first thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a first oxidation condition that includes an oxidation time, a plasma power, and a substrate temperature. A second thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a second oxidation condition, where the second oxidation condition is different than the first oxidation condition by one or more parameters. After etching the patterned core material, a resulting profile of the silicon oxide spacer is dependent at least in part on the first and second oxidation conditions.

    METHOD AND APPARATUS FOR ANISOTROPIC TUNGSTEN ETCHING
    6.
    发明申请
    METHOD AND APPARATUS FOR ANISOTROPIC TUNGSTEN ETCHING 有权
    方法和装置用于各向异性刺激蚀刻

    公开(公告)号：US20160196985A1

    公开(公告)日：2016-07-07

    申请号：US14589424

    申请日：2015-01-05

    申请人： LAM RESEARCH CORPORATION

    发明人： Zhongkui Tan ,  Qian Fu ,  Huai-Yu Hsiao

    IPC分类号： H01L21/3213 ,  H01L21/027 ,  H01L21/67

    CPC分类号： H01L21/32136 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/67069

    摘要： Methods for anisotropically etching a tungsten-containing material (such as doped or undoped tungsten metal) include cyclic treatment of tungsten surface with Cl2 plasma and with oxygen-containing radicals. Treatment with chlorine plasma is performed while the substrate is electrically biased resulting in predominant etching of horizontal surfaces on the substrate. Treatment with oxygen-containing radicals passivates the surface of the substrate to etching, and protects the vertical surfaces of the substrate, such as sidewalls of recessed features, from etching. Treatment with Cl2 plasma and with oxygen-containing radicals can be repeated in order to remove a desired amount of material. Anisotropic etching can be performed selectively in a presence of dielectric materials such as silicon oxide, silicon nitride, and silicon oxynitride.

    摘要翻译： 含钨材料（例如掺杂或未掺杂的钨金属）的各向异性蚀刻的方法包括用Cl 2等离子体和含氧基团对钨表面进行循环处理。 在对基板进行电偏压的同时进行用氯等离子体的处理，导致基板上的水平表面的主要蚀刻。 用含氧自由基进行处理使基板的表面钝化成蚀刻，并且保护基板的垂直表面（例如凹陷特征的侧壁）不被蚀刻。 可以重复用Cl 2等离子体和含氧基团进行处理以除去所需量的材料。 各向异性蚀刻可以在介电材料如氧化硅，氮化硅和氮氧化硅的存在下选择性地进行。

    Etch process with pre-etch transient conditioning
    8.
    发明授权
    Etch process with pre-etch transient conditioning 有权
    蚀刻过程与预蚀刻瞬态条件

    公开(公告)号：US09142417B2

    公开(公告)日：2015-09-22

    申请号：US13715973

    申请日：2012-12-14

    申请人： Lam Research Corporation

    发明人： Wonchul Lee ,  Qian Fu ,  John S. Drewery

    IPC分类号： H01L21/467 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/3213

    CPC分类号： H01L21/30655 ,  H01J37/32091 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/467

    摘要： A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence.

    摘要翻译： 提供了一种用于在蚀刻层中蚀刻具有不同纵横比的特征的方法。 提供多个循环，其中每个循环包括蚀刻层的预蚀刻瞬态调节，其提供蚀刻层的瞬态条件，其中瞬态条件具有持续时间并在一定时间内蚀刻蚀刻层，其中持续时间 相对于瞬态条件的持续时间的蚀刻被控制以控制蚀刻纵横比依赖性。