公开(公告)号：US20220282366A1

公开(公告)日：2022-09-08

申请号：US17753208

申请日：2020-08-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Ragesh Puthenkovilakam ,  Gordon Alex Macdonald ,  Shaoqing Zhang ,  Shih-Ked Lee ,  Jun Xue ,  Samantha S.H. Tan ,  Xizhu Zhao ,  Mary Anne Manumpil ,  Eric A. Hudson ,  Chin-Jui Hsu

IPC: C23C16/26 ,  C23C16/04 ,  C23C16/40

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.