公开(公告)号：US20230230811A1

公开(公告)日：2023-07-20

申请号：US17998354

申请日：2021-05-25

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Da Li ,  Younghee Lee ,  Samantha S.H. Tan ,  Alan J. Jensen ,  Jun Xue ,  Mary Anne Manumpil

IPC: H01J37/32 ,  H01L21/027 ,  H01L21/033 ,  G03F7/09 ,  G03F7/004 ,  G03F7/16 ,  G03F7/11

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0332 ,  G03F7/094 ,  G03F7/0042 ,  G03F7/167 ,  G03F7/11 ,  H01J2237/3328 ,  H01J37/32816 ,  H01J37/321 ,  H01J37/32899

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.

公开(公告)号：US20220282366A1

公开(公告)日：2022-09-08

申请号：US17753208

申请日：2020-08-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Ragesh Puthenkovilakam ,  Gordon Alex Macdonald ,  Shaoqing Zhang ,  Shih-Ked Lee ,  Jun Xue ,  Samantha S.H. Tan ,  Xizhu Zhao ,  Mary Anne Manumpil ,  Eric A. Hudson ,  Chin-Jui Hsu

IPC: C23C16/26 ,  C23C16/04 ,  C23C16/40

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

公开(公告)号：US11314168B2

公开(公告)日：2022-04-26

申请号：US17310635

申请日：2021-01-11

Applicant: Lam Research Corporation

Inventor： Samantha S. H. Tan ,  Jun Xue ,  Mary Anne Manumpil ,  Jengyi Yu ,  Da Li

IPC: G03F7/09 ,  C23C16/04 ,  H01L21/02 ,  H01L21/033 ,  G03F7/20 ,  H01L21/027 ,  G03F1/22 ,  G03F7/16

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

公开(公告)号：US20240255850A1

公开(公告)日：2024-08-01

申请号：US18628111

申请日：2024-04-05

Applicant: Lam Research Corporation

Inventor： Samantha S.H. Tan ,  Jun Xue ,  Mary Anne Manumpil ,  Jengyi Yu ,  Da Li

IPC: G03F7/09 ,  C23C16/04 ,  G03F1/22 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/094 ,  C23C16/047 ,  G03F1/22 ,  G03F7/091 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/70033 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/0332

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

公开(公告)号：US11988965B2

公开(公告)日：2024-05-21

申请号：US17452365

申请日：2021-10-26

Applicant: Lam Research Corporation

Inventor： Samantha S. H. Tan ,  Jun Xue ,  Mary Anne Manumpil ,  Jengyi Yu ,  Da Li

IPC: G03F7/09 ,  C23C16/04 ,  G03F1/22 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/094 ,  C23C16/047 ,  G03F1/22 ,  G03F7/091 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/70033 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/0332

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

公开(公告)号：US11521860B2

公开(公告)日：2022-12-06

申请号：US17280065

申请日：2019-09-26

Applicant: Lam Research Corporation

Inventor： Jun Xue ,  Samantha SiamHwa Tan ,  Mohand Brouri ,  Yuanhui Li ,  Daniel Peter ,  Alexander Kabansky

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/66

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

公开(公告)号：US20220035247A1

公开(公告)日：2022-02-03

申请号：US17310635

申请日：2021-01-11

Applicant: Lam Research Corporation

Inventor： Samantha S.H. Tan ,  Jun Xue ,  Mary Anne Manumpil ,  Jengyi Yu ,  Da Li

IPC: G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/02 ,  H01L21/033 ,  C23C16/04

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

公开(公告)号：US12062537B2

公开(公告)日：2024-08-13

申请号：US17439948

申请日：2020-03-18

Applicant: LAM RESEARCH CORPORATION

Inventor： Jun Xue ,  Mary Anne Manumpil ,  Shih-Ked Lee ,  Samantha SiamHwa Tan

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/455 ,  C23C16/505 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02274 ,  C23C16/26 ,  C23C16/45536 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/0228 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from −20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.