Method and apparatus for fine resolution brushless motor control
    2.
    发明授权
    Method and apparatus for fine resolution brushless motor control 失效
    精细分辨率无刷电机控制的方法和装置

    公开(公告)号:US06744230B2

    公开(公告)日:2004-06-01

    申请号:US10283472

    申请日:2002-10-29

    IPC分类号: H02K2300

    CPC分类号: G01P3/487 G01P3/48 H02P6/17

    摘要: A motor controller (30) includes three analog Hall-effect sensors (42, 44, 46) for forming continuous-time signals proportional to the sine and cosine of the position of the rotor (24) of a motor (20). The sine and cosine signals are differentiated to obtain signals proportional to the rotor rate times the sine and cosine values. These integrated values are then multiplied by the cosine and inverse of the sine values, respectively, to obtain values equal to the rotor rate times the square of the cosine and the rotor rate times the square of the sine. These latter two values are summed to obtain an output signal proportional to the rotor rate based on the trigonometric identity sin2(x)+cos2(x)=1. Since the motor controller (30) derives a high-resolution value for the rotor rate, it may be used for fine resolution control of brushless motors and the like.

    摘要翻译: 马达控制器(30)包括三个模拟霍尔效应传感器(42,44,46),用于形成与马达(20)的转子(24)的位置的正弦和余弦成比例的连续时间信号。 正弦和余弦信号被微分,以获得与转子速率成比例的信号乘以正弦和余弦值。 然后将这些积分值分别乘以正弦值的余弦和反相,以获得等于余弦的平方和转子速率乘以正弦的平方的转子速率的值。 将后两个值相加以获得与基于三角函数相同的转子速率成比例的输出信号sin(2)(x)+ cos(2)(x)= 1。 由于电动机控制器(30)为转子速率导出高分辨率值,所以可以用于无刷电动机等的精细分辨率控制。

    Fabrication of a semiconductor device
    3.
    发明授权
    Fabrication of a semiconductor device 失效
    半导体器件的制造

    公开(公告)号:US3936860A

    公开(公告)日:1976-02-03

    申请号:US535768

    申请日:1974-12-23

    申请人: Bryan H. Hill

    发明人: Bryan H. Hill

    CPC分类号: H01L29/00 H01L21/00 H01L29/78

    摘要: A semiconductor material of a first conductivity type has one of its surfaces subjected to high energy oxygen ion implantation, thereby forming an oxide layer below that surface. A gate is formed by masking at least a portion of the surface, exposing the unmasked portion to ion radiation so as to implant impurity ions in the region of the semiconductor material between its unmasked surface and the upper side of the subsurface oxide layer, and metallizing the surface above the implanted region. After removal of the masking material, source and drain areas are formed by high energy ion implantation in the semiconductor material adjacent the lower side of the subsurface oxide layer, the areas having a conductivity opposite the first conductivity type. After windows to the source and drain areas are opened in the semiconductor material and subsurface oxide layer, the exposed surfaces of these areas are metallized.

    摘要翻译: 第一导电类型的半导体材料的一个表面经受高能氧离子注入,从而在该表面下方形成氧化物层。 通过掩蔽表面的至少一部分来形成栅极,将未掩模的部分暴露于离子辐射,以便在半导体材料的未掩模表面和地下氧化物层的上侧之间的半导体材料区域中注入杂质离子,并且金属化 植入区域以上的表面。 在去除掩模材料之后,源极和漏极区域通过在靠近地下氧化层的下侧的半导体材料中的高能离子注入形成,该区域具有与第一导电类型相反的导电性。 在半导体材料和地下氧化物层之间将源极和漏极区域的窗口打开之后,这些区域的暴露表面被金属化。