公开(公告)号：US5647953A

公开(公告)日：1997-07-15

申请号：US577340

申请日：1995-12-22

申请人： Larry Williams ,  David R. Pirkle ,  William Harshbarger ,  Timothy Ebel

发明人： Larry Williams ,  David R. Pirkle ,  William Harshbarger ,  Timothy Ebel

IPC分类号： B08B7/00 ,  C23C16/44 ,  C23C16/00

CPC分类号： B08B7/0035 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： A method for cleaning and conditioning a plasma processing chamber wherein oxide residues have been previously formed on interior surfaces of the chamber. The method includes introducing a cleaning gas including a fluorine-based gas into the chamber followed by performing a plasma cleaning step. The plasma cleaning step is performed by activating the cleaning gas mixture and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing oxide residues on the interior surfaces. The cleaning step is followed by coating the interior surfaces with silicon dioxide to adhere loose particles to the interior surfaces and a conditioning step wherein uncoated interior surfaces are treated to remove fluorine therefrom. An advantage of the cleaning and conditioning method is that it is not necessary to open the chamber. Also, it is possible to remove oxide residues during the cleaning step and remove fluorine remaining after the cleaning step during the conditioning step. The conditioning step is carried out by introducing a hydrogen-containing gas into the chamber as a purge gas or the chamber can be pressurized by the hydrogen-containing gas followed by evacuating the chamber.

摘要翻译： 一种用于清洁和调节等离子体处理室的方法，其中先前在室的内表面上形成氧化物残留物。 该方法包括将包括氟基气体的清洁气体引入室中，然后执行等离子体清洗步骤。 通过激活清洁气体混合物并形成等离子体清洁气体，使室的内表面与等离子体清洁气体接触并除去内表面上的氧化物残余物来进行等离子体清洗步骤。 清洁步骤之后，用二氧化硅涂覆内表面以将松散的颗粒粘附到内表面，以及调节步骤，其中处理未涂覆的内表面以从其中除去氟。 清洁和调节方法的优点是不需要打开室。 此外，在清洁步骤期间可以除去氧化物残留物，并且在调节步骤期间除去清洁步骤后剩余的氟。 调节步骤通过将含氢气体作为吹扫气体引入室中，或者可以通过含氢气体对室进行加压，然后抽空室来进行。