公开(公告)号：US09117956B2

公开(公告)日：2015-08-25

申请号：US13600987

申请日：2012-08-31

申请人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger ,  Samuel H. Demtsu ,  David Joseph Dickerson ,  Laura Jean Wilson ,  Mehran Sadeghi

发明人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger ,  Samuel H. Demtsu ,  David Joseph Dickerson ,  Laura Jean Wilson ,  Mehran Sadeghi

IPC分类号： H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

摘要： Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface. The treatment solution comprises a chlorinated compound component that is substantially free from copper, a copper-containing metal salt, and a solvent.

摘要翻译： 提供了在制造薄膜光伏器件时制备用于耦合到背接触的p-n结的p型吸收层的暴露表面的方法。 该方法可以包括：将处理溶液施加到由碲化镉的p型吸收层限定的暴露表面上; 并且与处理溶液接触的p型吸收体层退火该器件，以在暴露表面的p型吸收体层中形成富含碲的区域。 处理溶液包含基本上不含铜的氯化化合物组分，含铜金属盐和溶剂。

公开(公告)号：US20140065762A1

公开(公告)日：2014-03-06

申请号：US13600987

申请日：2012-08-31

申请人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger ,  Samuel H. Demtsu ,  David Joseph Dickerson ,  Laura Jean Wilson ,  Mehran Sadeghi

发明人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger ,  Samuel H. Demtsu ,  David Joseph Dickerson ,  Laura Jean Wilson ,  Mehran Sadeghi

IPC分类号： H01L31/18

CPC分类号： H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

摘要： Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface. The treatment solution comprises a chlorinated compound component that is substantially free from copper, a copper-containing metal salt, and a solvent.

摘要翻译： 提供了在制造薄膜光伏器件时制备用于耦合到背接触的p-n结的p型吸收层的暴露表面的方法。 该方法可以包括：将处理溶液施加到由碲化镉的p型吸收层限定的暴露表面上; 并且与处理溶液接触的p型吸收体层退火该器件，以在暴露表面的p型吸收体层中形成富含碲的区域。 处理溶液包含基本上不含铜的氯化化合物组分，含铜金属盐和溶剂。