公开(公告)号：US09117956B2

公开(公告)日：2015-08-25

申请号：US13600987

申请日：2012-08-31

申请人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger ,  Samuel H. Demtsu ,  David Joseph Dickerson ,  Laura Jean Wilson ,  Mehran Sadeghi

发明人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger ,  Samuel H. Demtsu ,  David Joseph Dickerson ,  Laura Jean Wilson ,  Mehran Sadeghi

IPC分类号： H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

摘要： Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface. The treatment solution comprises a chlorinated compound component that is substantially free from copper, a copper-containing metal salt, and a solvent.

摘要翻译： 提供了在制造薄膜光伏器件时制备用于耦合到背接触的p-n结的p型吸收层的暴露表面的方法。 该方法可以包括：将处理溶液施加到由碲化镉的p型吸收层限定的暴露表面上; 并且与处理溶液接触的p型吸收体层退火该器件，以在暴露表面的p型吸收体层中形成富含碲的区域。 处理溶液包含基本上不含铜的氯化化合物组分，含铜金属盐和溶剂。

公开(公告)号：US20140060635A1

公开(公告)日：2014-03-06

申请号：US13601162

申请日：2012-08-31

申请人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

发明人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC分类号： H01L31/0232

CPC分类号： H01L31/02963 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543

摘要： Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

摘要翻译： 介绍了光伏器件。 光电器件包括窗口层和包括设置在窗口层上的半导体材料的半导体层。 所述半导体层包括第一区域和第二区域，所述第一区域设置在所述窗口层附近，所述第二区域包括富硫族元素区域，其中所述第一区域和所述第二区域包括掺杂剂，并且平均原子浓度 在第二区域中的掺杂剂的平均原子浓度大于第一区域中的掺杂剂的平均原子浓度。

公开(公告)号：US09231134B2

公开(公告)日：2016-01-05

申请号：US13601162

申请日：2012-08-31

申请人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

发明人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC分类号： H01L31/042 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/073

CPC分类号： H01L31/02963 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543

摘要： Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

摘要翻译： 介绍了光伏器件。 光电器件包括窗口层和包括设置在窗口层上的半导体材料的半导体层。 所述半导体层包括第一区域和第二区域，所述第一区域设置在所述窗口层附近，所述第二区域包括富硫族元素区域，其中所述第一区域和所述第二区域包括掺杂剂，并且平均原子浓度 在第二区域中的掺杂剂的平均原子浓度大于第一区域中的掺杂剂的平均原子浓度。

公开(公告)号：US20140060634A1

公开(公告)日：2014-03-06

申请号：US13601022

申请日：2012-08-31

申请人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger

发明人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/02963 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： Photovoltaic devices are provided that include a transparent superstrate; a transparent conductive oxide on the transparent superstrate; an n-type window layer on the transparent superstrate; a p-type absorber layer on the n-type window layer; and an inert conductive paste layer on the back surface of the p-type absorber layer. The p-type absorber layer includes cadmium telluride, and defines a back surface positioned opposite from the n-type window layer that is tellurium enriched. The inert conductive paste layer is substantially free from an acid or acid generator. Methods are also generally provided of forming such a back contact.

摘要翻译： 提供包括透明覆盖层的光伏器件; 透明覆盖层上的透明导电氧化物; 在透明覆盖物上的n型窗口层; n型窗口层上的p型吸收层; 以及p型吸收体层的背面的惰性导电性糊剂层。 p型吸收层包括碲化镉，并且限定了与富含碲的n型窗口层相对的后表面。 惰性导电浆料层基本上不含酸或酸发生剂。 还通常提供形成这种后接触的方法。

公开(公告)号：US20140065762A1

公开(公告)日：2014-03-06

申请号：US13600987

申请日：2012-08-31

申请人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger ,  Samuel H. Demtsu ,  David Joseph Dickerson ,  Laura Jean Wilson ,  Mehran Sadeghi

发明人： Laura Anne Clark ,  Tammy Jane Lucas ,  Wyatt Keith Metzger ,  Samuel H. Demtsu ,  David Joseph Dickerson ,  Laura Jean Wilson ,  Mehran Sadeghi

IPC分类号： H01L31/18

CPC分类号： H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

摘要： Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface. The treatment solution comprises a chlorinated compound component that is substantially free from copper, a copper-containing metal salt, and a solvent.

摘要翻译： 提供了在制造薄膜光伏器件时制备用于耦合到背接触的p-n结的p型吸收层的暴露表面的方法。 该方法可以包括：将处理溶液施加到由碲化镉的p型吸收层限定的暴露表面上; 并且与处理溶液接触的p型吸收体层退火该器件，以在暴露表面的p型吸收体层中形成富含碲的区域。 处理溶液包含基本上不含铜的氯化化合物组分，含铜金属盐和溶剂。

公开(公告)号：US20140060633A1

公开(公告)日：2014-03-06

申请号：US13600940

申请日：2012-08-31

申请人： Tammy Jane Lucas ,  Caroline Rae Corwine ,  Laura Anne Clark ,  Wyatt Keith Metzger ,  Mehran Sadeghi ,  Michael Christopher Cole ,  Timothy John Trentler

发明人： Tammy Jane Lucas ,  Caroline Rae Corwine ,  Laura Anne Clark ,  Wyatt Keith Metzger ,  Mehran Sadeghi ,  Michael Christopher Cole ,  Timothy John Trentler

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01B1/24 ,  H01L31/073 ,  Y02E10/543

摘要： Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p-type absorber layer (of cadmium telluride) of a p-n junction; and, curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing. The conductive paste can comprises a conductive material, an optional solvent system, and a binder. Thin film photovoltaic devices are also provided, such as those that have a conductive coating that is substantially free from an acid.

摘要翻译： 提供了在薄膜光伏器件上形成背接触的方法。 该方法可以包括：将导电浆料施加到由p-n结的p型吸收层（碲化镉）限定的表面上; 并且固化导电浆料以在表面上形成导电涂层，使得在固化期间，来自导电浆料的酸反应以使碲表面富集，但在固化过程中基本消耗。 导电浆料可以包括导电材料，任选的溶剂体系和粘合剂。 还提供了薄膜光伏器件，例如具有基本上不含酸的导电涂层的光电器件。

公开(公告)号：US09276157B2

公开(公告)日：2016-03-01

申请号：US13601110

申请日：2012-08-31

申请人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

发明人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC分类号： H01L21/00 ,  H01L31/073 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/0392

CPC分类号： H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

摘要： Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

摘要翻译： 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。

公开(公告)号：US20140065763A1

公开(公告)日：2014-03-06

申请号：US13601110

申请日：2012-08-31

申请人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

发明人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC分类号： H01L31/18

CPC分类号： H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

摘要： Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

摘要翻译： 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。