MEMS structure with raised electrodes

    公开(公告)号:US06791742B2

    公开(公告)日:2004-09-14

    申请号:US10700734

    申请日:2003-11-03

    IPC分类号: G02B2600

    摘要: In an electrostatically controlled deflection apparatus, such as a MEMS array having cavities formed around electrodes and which is mounted directly on a dielectric or controllably resistive substrate in which are embedded electrostatic actuation electrodes disposed in alignment with the individual MEMS elements, a mechanism is provided to mitigate the effects of uncontrolled dielectric surface potentials between the MEMS elements and the electrostatic actuation electrodes, the mechanism being raised electrodes relative to the dielectric or controllably resistive surface of the substrate. The aspect ratio of the gaps between elements (element height to element separation ratio) is at least 0.1 and preferably at least 0.5 and preferably between 0.75 and 2.0 with a typical choice of about 1.0, assuming a surface fill factor of 50% or greater. Higher aspect ratios at these fill factors are believed not to provide more than marginal improvement.

    MEMS structure with surface potential control
    2.
    发明授权
    MEMS structure with surface potential control 有权
    具有表面电位控制的MEMS结构

    公开(公告)号:US06693735B1

    公开(公告)日:2004-02-17

    申请号:US09919219

    申请日:2001-07-30

    IPC分类号: G02B2600

    摘要: In an electrostatically controlled apparatus, such as a MEMS array having cavities formed around electrodes and which is mounted directly on a dielectric substrate in which are embedded electrostatic actuation electrodes disposed in alignment with the individual MEMS elements, a mechanism is provided to controllably neutralize excess charge and establish a controlled potential between the MEMS elements and the electrostatic actuation electrodes.

    摘要翻译: 在静电控制装置中,例如具有围绕电极形成的空腔的MEMS阵列,其直接安装在电介质基底上,其中嵌入的静电致动电极与各个MEMS元件对齐设置,提供了可控地中和多余电荷的机构 并且在MEMS元件和静电致动电极之间建立受控电位。

    MEMS structure with mechanical overdeflection limiter
    3.
    发明授权
    MEMS structure with mechanical overdeflection limiter 有权
    具有机械超限制器件的MEMS结构

    公开(公告)号:US06805454B2

    公开(公告)日:2004-10-19

    申请号:US10625883

    申请日:2003-07-22

    IPC分类号: G02B7182

    摘要: A MEMS device having a fixed element and a movable element wherein one or the other of the fixed element and the movable element has at least one radially-extended stop or overdeflection limiter. A fixed overlayer plate forms an aperture. The aperture is sized to minimize vignetting and may be beveled on the margin. Overdeflection limitation occurs during deflection before the movable element can impinge on an underlying electrode. The overdeflection limiter may be conveniently placed adjacent a gimbaled hinge.

    摘要翻译: 具有固定元件和可移动元件的MEMS器件,其中固定元件和可移动元件中的一个或另一个具有至少一个径向延伸的止动或超限制器。 固定的覆盖板形成孔。 孔径的大小可使晕影最小化,并可在边缘上倾斜。 在可移动元件可能撞击下面的电极之前,在偏转期间发生过度偏差限制。 过度限制器可以方便地放置在万向铰链附近。

    MEMS structure with mechanical overdeflection limiter
    4.
    发明授权
    MEMS structure with mechanical overdeflection limiter 有权
    具有机械超限制器件的MEMS结构

    公开(公告)号:US06641273B1

    公开(公告)日:2003-11-04

    申请号:US10186566

    申请日:2002-06-28

    IPC分类号: G02B7182

    摘要: A MEMS device having a fixed element and a movable element wherein one or the other of the fixed element and the movable element has at least one radially-extended stop or overdeflection limiter. A fixed overlayer plate forms an aperture. The aperture is sized to minimize vignetting and may be beveled on the margin. Overdeflection limitation occurs during deflection before the movable element can impinge on an underlying electrode. The overdeflection limiter may be conveniently placed adjacent a gimbaled hinge.

    摘要翻译: 具有固定元件和可移动元件的MEMS器件,其中固定元件和可移动元件中的一个或另一个具有至少一个径向延伸的止动或超限制器。 固定的覆盖板形成孔。 孔径的大小可使晕影最小化,并可在边缘上倾斜。 在可移动元件可能撞击下面的电极之前,在偏转期间发生过度偏差限制。 过度限制器可以方便地放置在万向铰链附近。

    Charging Guard With Paschen Stacking
    5.
    发明申请
    Charging Guard With Paschen Stacking 有权
    充电保护与Paschen堆叠

    公开(公告)号:US20080112038A1

    公开(公告)日:2008-05-15

    申请号:US11559825

    申请日:2006-11-14

    IPC分类号: G02B26/00

    CPC分类号: G02B26/0841

    摘要: A MEMS-based mirror is provided with trenches between adjacent electrodes in order to be able to withstand relatively high applied voltages, and thus has a substantially reduced exposure to uncontrolled surface potentials. The MEMS-based mirror, thus avoids voltage drifts and has an improved mirror position stability. The trench dimensions are selected such that the voltage applied between each adjacent pair of electrodes stays within predefined limits. An insulating layer, such as silicon dioxide, electrically isolates each pair of adjacent electrodes. Each insulting layer extends partially above an associated trench and is characterized by the same height and width dimensions.

    摘要翻译: 在相邻电极之间设置有基于MEMS的反射镜,以便能够承受相对较高的施加电压,从而基本上减少暴露于不受控制的表面电位。 基于MEMS的反射镜,因此避免了电压漂移,并具有改进的镜面位置稳定性。 选择沟槽尺寸,使得施加在每个相邻电极对之间的电压保持在预定义的限度内。 诸如二氧化硅的绝缘层电隔离每对相邻的电极。 每个绝缘层部分地在相关联的沟槽上方延伸,并且其特征在于相同的高度和宽度尺寸。

    Charging guard with paschen stacking
    6.
    发明授权
    Charging guard with paschen stacking 有权
    充电保护箱与paschen堆叠

    公开(公告)号:US07508572B2

    公开(公告)日:2009-03-24

    申请号:US11559825

    申请日:2006-11-14

    IPC分类号: G02B26/00 G02B26/08 G02F1/29

    CPC分类号: G02B26/0841

    摘要: A MEMS-based mirror is provided with trenches between adjacent electrodes in order to be able to withstand relatively high applied voltages, and thus has a substantially reduced exposure to uncontrolled surface potentials. The MEMS-based mirror, thus avoids voltage drifts and has an improved mirror position stability. The trench dimensions are selected such that the voltage applied between each adjacent pair of electrodes stays within predefined limits. An insulating layer, such as silicon dioxide, electrically isolates each pair of adjacent electrodes. Each insulting layer extends partially above an associated trench and is characterized by the same height and width dimensions.

    摘要翻译: 在相邻电极之间设置有基于MEMS的反射镜,以便能够承受相对较高的施加电压,从而基本上减少暴露于不受控制的表面电位。 基于MEMS的反射镜,因此避免了电压漂移,并具有改进的镜面位置稳定性。 选择沟槽尺寸,使得施加在每个相邻电极对之间的电压保持在预定义的限度内。 诸如二氧化硅的绝缘层电隔离每对相邻的电极。 每个绝缘层部分地在相关联的沟槽上方延伸,并且其特征在于相同的高度和宽度尺寸。

    ARRAY OF GRADUATED PRE-TILTED MEMS MIRRORS
    7.
    发明申请
    ARRAY OF GRADUATED PRE-TILTED MEMS MIRRORS 审中-公开
    研磨抛光MEMS微镜阵列

    公开(公告)号:US20080137172A1

    公开(公告)日:2008-06-12

    申请号:US11567723

    申请日:2006-12-06

    IPC分类号: G02B26/00

    摘要: An array of MEMS devices is formed on a planar substrate having in each of a plurality of annular regions or sectors a plurality of MEMS mirrors of substantially identical structure, wherein the MEMS mirrors in each region have an identical pre-tilt. The pre-tilt is achieved by embedding each dual-axis tiltable mirror within a pre-tilted microplatform or gimbal. In a specific embodiment, one microplatform of a preselected pre-tilt is provided for each micromirror and an underlying electrode is provided having a shape conforming with the pre-tilt. In a specific embodiment, the annular regions are contiguous elliptical or ovoidal regions. By pre-tilt, it is meant that the rest state or nonactuated state of the micro-mirror is such that a reflected beam from a fixed source is directed to the center of a target array.

    摘要翻译: 在平面基板上形成MEMS器件的阵列,其具有在多个环形区域或扇区中的每一个中具有基本相同结构的多个MEMS反射镜,其中每个区域中的MEMS反射镜具有相同的预倾斜。 预倾斜是通过将每个双轴可倾斜镜嵌入预倾斜的微平台或万向节来实现的。 在具体实施例中,为每个微反射镜提供预选的预倾角的一个微平台,并且提供具有与预倾斜一致的形状的底层电极。 在具体实施例中,环形区域是相邻的椭圆形或椭圆形区域。 通过预倾斜,意味着微镜的静止状态或非激活状态使得来自固定源的反射光束被引导到目标阵列的中心。

    MEMS hybrid structure having flipped silicon with external standoffs
    8.
    发明授权
    MEMS hybrid structure having flipped silicon with external standoffs 有权
    MEMS混合结构具有外部支架翻转硅

    公开(公告)号:US06649987B1

    公开(公告)日:2003-11-18

    申请号:US09975119

    申请日:2001-10-09

    IPC分类号: H01L2982

    CPC分类号: B81B3/0086

    摘要: A structure of a hybrid MEMS structure is provided wherein a plate comprises a thin actuatable layer of conductive silicon, such as a MEMS actuatable element, and a thicker handle layer of conductive silicon to provide structural integrity which are separated by a thin oxide, together forming an SOI wafer. This plate is mounted to a substrate, typically ceramic, with the thin actuatable layer facing the substrate and separated by an air gap that is formed by creating, on the substrate, insulator standoffs which come in contact with the plate. A suitable dielectric material useful as a standoff on the substrate is a footrest that permits high aspect ratios.

    摘要翻译: 提供了混合MEMS结构的结构,其中板包括导电硅的薄可致动层,例如MEMS可致动元件,以及较厚的导电硅手柄层,以提供由薄氧化物分隔的结构完整性,一起形成 SOI晶片。 该板被安装到通常为陶瓷的基板上,薄的可致动层面向基板,并由通过在基板上产生与板接触的绝缘体间隙而形成的气隙分开。 用作衬底上的支座的合适的介电材料是允许高纵横比的搁脚板。

    Method And Apparatus For Localized Bonding
    9.
    发明申请
    Method And Apparatus For Localized Bonding 审中-公开
    用于局部粘合的方法和装置

    公开(公告)号:US20080113160A1

    公开(公告)日:2008-05-15

    申请号:US11559831

    申请日:2006-11-14

    IPC分类号: B32B7/14 B32B37/02 B32B37/14

    摘要: One or more cavities are formed in the bonding surfaces of one, all, or some of the elements to be bonded. These cavities serve as receptacles for the bonding material and are where the bonds are localized. The cavities are of sufficient size and shape so that their volume is greater than the volume of bonding material forming the bond. This ensures that when the elements are brought into contact with one another to mate, the bonding material, which can flow prior to solidifying into a bond, will flow into the cavities and will not impede the separation of the parts. This allows the parts to be mated with nominally zero separation. Once solidified, the bonding material forms a localized bond inside each cavity. Different cavity shapes, such as, rectangular, circular, or any other shape that can be injected or filled with adhesive material may be used.

    摘要翻译: 在待结合的一个,全部或一些元件的接合表面中形成一个或多个空腔。 这些空腔用作接合材料的接收器,并且是键的位置。 空腔具有足够的尺寸和形状,使得它们的体积大于形成结合的粘合材料的体积。 这确保了当元件彼此接触以配合时,可以在凝固成粘合之前流动的粘合材料将流入空腔中,并且不会阻碍部件的分离。 这允许零件与标称零分离配合。 一旦固化,接合材料在每个空腔内形成局部粘合。 可以使用不同的腔体形状,例如矩形,圆形或可以用粘合剂材料注射或填充的任何其它形状。