摘要:
An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.
摘要:
An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color-detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.
摘要:
A gas sensor that has its heater and sensing layer on opposite sides of the substrate. The gas sensor includes a buffer layer separating the gas-sensing layer from the substrate to improve mechanical strength and electrical properties. The heater is preferably formed of nickel paste and is provided on the back of the substrate.
摘要:
A multidirectional ultraviolet sensor includes a substrate and a UV-sensitive layer. The UV-sensitive layer contains nano-sized or micro-sized particles of a UV-sensitive material, which is attached to a top surface of the substrate by sintering process to enable sensing of ultraviolet light incident on the ultraviolet sensor from various directions. The UV-sensitive layer is in contact with a first and a second electrode layer, which are arranged at the top surface or the bottom surface the UV-sensitive layer in the same horizontal plane, or respectively at two opposite sides of the UV-sensitive layer. Since an impedance value of the UV-sensitive layer changes in response to an intensity of incident ultraviolet light, the intensity of the incident ultraviolet light is measured by detecting the impedance of the UV-sensitive layer.
摘要:
A multidirectional ultraviolet sensor includes a substrate and a UV-sensitive layer. The UV-sensitive layer contains nano-sized or micro-sized particles of a UV-sensitive material, which is attached to a top surface of the substrate by sintering process to enable sensing of ultraviolet light incident on the ultraviolet sensor from various directions. The UV-sensitive layer is in contact with a first and a second electrode layer, which are arranged at the top surface or the bottom surface the UV-sensitive layer in the same horizontal plane, or respectively at two opposite sides of the UV-sensitive layer. Since an impedance value of the UV-sensitive layer changes in response to an intensity of incident ultraviolet light, the intensity of the incident ultraviolet light is measured by detecting the impedance of the UV-sensitive layer.
摘要:
A method of fabricating a gas sensor which comprises a substrate; a buffer layer coated on the substrate; at least one gas sensing layer arranged on the buffer layer; a pair of electrodes disposed on the gas sensing layer; and a catalytic layer coated on the gas sensing layer. A spin coating process is performed, using centrifugal force, to form the layers which are thin and evenly deposited on the substrate. The gas sensing layer of the gas sensor is formed before forming the electrodes of the same such that the heat treatment thereto can be carried out at 800.degree. C. which is much higher than the conventional temperature of 600.degree. C. The bonding of the gas sensing layer to the substrate is thereby much stronger than the conventional gas sensor.