公开(公告)号：US5789263A

公开(公告)日：1998-08-04

申请号：US475191

申请日：1995-06-07

申请人： Lee-Ching Kuo ,  Ming-Hann Tzeng ,  Yean-Kuen Fang

发明人： Lee-Ching Kuo ,  Ming-Hann Tzeng ,  Yean-Kuen Fang

IPC分类号： H01L27/14 ,  H01L31/00 ,  H01L31/101 ,  H01L31/108

CPC分类号： H01L31/101 ,  H01L31/108

摘要： An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

摘要翻译： 一种非晶硅色彩检测器，包括由透明导电氧化膜（TCO）层/ a-Si：H层/金属层构成的结构，其中a-Si：H层是非晶硅层，其厚度大于 并且金属层由选自Cr，Au，Pd，Al，Pt，Mo，Ag或Ti的金属组成的金属制成。 根据对不同偏置电压中的不同颜色光的吸光度，颜色检测器的耗尽区域被重新布置在其位置和内容上，以达到检测不同颜色光的目的。 非晶硅彩色图像传感器包括多个彩色检测器，其布置成并入扫描装置的线性阵列，处理器和A / D转换器，以处理从扫描获得的信号。 无定形硅胶彩色图像传感器特别用于扫描机或传真机。 还公开了非晶硅色彩检测器的制造方法。

公开(公告)号：US5449923A

公开(公告)日：1995-09-12

申请号：US861294

申请日：1992-03-31

申请人： Lee-Ching Kuo ,  Ming-Hann Tzeng ,  Yean-Kuen Fang

发明人： Lee-Ching Kuo ,  Ming-Hann Tzeng ,  Yean-Kuen Fang

IPC分类号： H01L27/14 ,  H01L31/00 ,  H01L31/101 ,  H01L31/108

CPC分类号： H01L31/101 ,  H01L31/108

摘要： An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color-detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

摘要翻译： 一种非晶硅色彩检测器，包括由透明导电氧化膜（TCO）层/ a-Si：H层/金属层构成的结构，其中a-Si：H层是非晶硅层，其厚度大于 并且金属层由选自Cr，Au，Pd，Al，Pt，Mo，Ag或Ti的金属组成的金属制成。 颜色检测器的耗尽区根据对不同偏置电压中的不同颜色光的吸光度重新排列在其位置和内容上，以达到检测不同颜色光的目的。 非晶硅彩色图像传感器包括多个彩色检测器，其布置成并入扫描装置的线性阵列，处理器和A / D转换器，以处理从扫描获得的信号。 无定形硅胶彩色图像传感器特别用于扫描机或传真机。 还公开了非晶硅色彩检测器的制造方法。

公开(公告)号：US5502595A

公开(公告)日：1996-03-26

申请号：US253907

申请日：1994-06-03

申请人： Lee-Ching Kuo ,  Fang-Chuan Ho ,  William Lee ,  Yean-Kuen Fang

发明人： Lee-Ching Kuo ,  Fang-Chuan Ho ,  William Lee ,  Yean-Kuen Fang

IPC分类号： G02B5/28 ,  G02B1/10 ,  G02B5/22

CPC分类号： G02B5/285

摘要： A color filter comprising a transparent substrate and two or more multilayer films of amorphous silicon materials deposited on said substrate, each film being different, each layer of said two or more multi-layer films having a thickness less than the wavelength of the visible light and at least three layers of said two or more multi-layer films of amorphous silicon materials in an alternate arrangement wherein the amorphous silicon materials are selected from a-SiOx and a-SiNx is described. A method of preparing the color filter comprising depositing on the substrate by PECVD method two or more multilayer films is also described. The color filters prepared by PECVD method have a more compact texture and a better environmental resistant. The PECVD method for the preparation of the filters is more efficient than conventional methods.

摘要翻译： 一种滤色器，包括透明基板和沉积在所述基板上的两个或更多个非晶硅材料多层膜，每个膜不同，所述两层或多层多层膜的每层的厚度均小于可见光的波长， 描述了至少三层所述两个或更多个非晶硅材料的多层薄膜，其中非晶硅材料选自a-SiOx和a-SiNx。 还描述了一种制备滤色器的方法，包括通过PECVD方法在基板上沉积两个或更多个多层膜。 通过PECVD方法制备的滤色片具有更紧凑的质感和更好的耐环境性。 用于制备过滤器的PECVD方法比常规方法更有效。

公开(公告)号：US5714772A

公开(公告)日：1998-02-03

申请号：US690675

申请日：1996-07-31

申请人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

发明人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

IPC分类号： H01L31/105 ,  H01L31/12 ,  H01L31/153 ,  H01L27/15 ,  H01L33/00

CPC分类号： H01L31/125 ,  H01L31/1055 ,  H01L31/153

摘要： A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 k.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

摘要翻译： 制造具有LED和非晶硅pin异质结二极管的光转换器的方法包括以下步骤：a）在衬底的一侧上制备作为发光单元的LED结构; b）在衬底的另一侧上形成缓冲层; 以及c）在缓冲层上沉积一个引脚（正型/本征型/负型）二极管作为该蓝/红光转换器的光吸收单元，并且在1k欧米茄下获得的上升时间值为112.5微秒。 本发明希望降低成本，简化制备过程，并且避免在制备pin二极管的过程中通过过热导致光转换单元的劣化。

公开(公告)号：US5604136A

公开(公告)日：1997-02-18

申请号：US452313

申请日：1995-05-26

申请人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

发明人： Yean-Kuen Fang ,  Kuen-Hsien Lee ,  Yaw-Jou Yang ,  Lee-Ching Kuo

IPC分类号： H01L31/105 ,  H01L31/12 ,  H01L31/153 ,  H01L21/208

CPC分类号： H01L31/125 ,  H01L31/1055 ,  H01L31/153

摘要： A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 kf.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

摘要翻译： 制造具有LED和非晶硅pin异质结二极管的光转换器的方法包括以下步骤：a）在衬底的一侧上制备作为发光单元的LED结构; b）在衬底的另一侧上形成缓冲层; 和c）在缓冲层上沉积一个引脚（正型/本征型/负型）二极管作为该蓝/红光转换器的光吸收单元，并且在1kf欧米茄时获得的上升时间值为112.5μsec。 本发明希望降低成本，简化制备过程，并且避免在制备pin二极管的过程中通过过热导致光转换单元的劣化。

公开(公告)号：US20060057765A1

公开(公告)日：2006-03-16

申请号：US10939894

申请日：2004-09-13

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Yean-Kuen Fang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Yean-Kuen Fang

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14625

摘要： A device includes an image sensing element. The device also includes a Silicon Dioxide (SiO2) layer, located over the image sensing element, exhibiting a first index of refraction. The device further includes a first lens, located over the SiO2 layer, exhibiting a second index of refraction greater than the first index of refraction. The device still further includes a color filter located over the first lens and a second lens located over the color filter.

摘要翻译： 一种装置包括图像感测元件。 该装置还包括位于图像感测元件上方的呈现第一折射率的二氧化硅（SiO 2）层。 该器件还包括位于SiO 2层之上的第一透镜，其具有大于第一折射率的第二折射率。 该装置还包括位于第一透镜上方的滤色器和位于滤色器上方的第二透镜。

公开(公告)号：US6161421A

公开(公告)日：2000-12-19

申请号：US987813

申请日：1997-12-10

申请人： Yean-Kuen Fang ,  Jyhyi Ho ,  C. H. Chen

发明人： Yean-Kuen Fang ,  Jyhyi Ho ,  C. H. Chen

IPC分类号： G01N27/12 ,  G01N33/00 ,  G01N27/00 ,  G01N27/06 ,  H01L29/66

CPC分类号： G01N27/128 ,  G01N33/0047

摘要： The present invention discloses an integrated ethanol gas sensor and fabrication thereof. The present invention utilities micro electro mechanical system (MEMS) technology and has a main sensing part in the form of a cantilever-bridge structure made of SiC thin film material arranged over a silicon substrate. The present invention integrates an SiC heater of comb or finger electrode shape and an SnO.sub.2 thin film gas sensing element applied over distinct portions on the same Si substrate together with Al2O3 and SnO2 thin films via a VLSI technology.

摘要翻译： 本发明公开了一种综合乙醇气体传感器及其制造方法。 本发明实用于微电子机械系统（MEMS）技术，并且具有由硅衬底上的SiC薄膜材料制成的悬臂桥结构形式的主感测部分。 本发明通过VLSI技术将通过梳状或指状电极形状的SiC加热器和SnO 2薄膜气体感测元件与Al 2 O 3和SnO 2薄膜一起施加在同一Si衬底上的不同部分上。

公开(公告)号：US6128211A

公开(公告)日：2000-10-03

申请号：US965406

申请日：1997-11-06

申请人： Yean-Kuen Fang ,  Fu-Yuan Chen ,  Jiann-Ruey Chen

发明人： Yean-Kuen Fang ,  Fu-Yuan Chen ,  Jiann-Ruey Chen

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A non-volatile ferroelectric memory device has been developed, in which the lead titanate (PbTiO.sub.3) thin film is deposited on a n/P.sup.+ Si substrate by rf magnetron sputtering as the gate oxide and Pt is embedded in the gate oxide as the floating gate. Additionally, associated with the rapid bulk channel structure with higher mobility, the developed memory device has the following features: (1) low write/erase voltage (.ltoreq.10 V); (2) fast access time (

摘要翻译： 已经开发了一种非挥发性铁电存储器件，其中通过rf磁控溅射将钛酸铅（PbTiO 3）薄膜沉积在n / P + Si衬底上作为栅极氧化物，并且Pt作为浮栅埋入栅极氧化物中。 另外，与具有更高移动性的快速体积通道结构相关联，显影的存储器件具有以下特征：（1）低写/擦除电压（

公开(公告)号：US5838034A

公开(公告)日：1998-11-17

申请号：US762961

申请日：1996-12-10

申请人： Yean-Kuen Fang ,  Fu-Yuan Chen ,  Jiann-Ruey Chen

发明人： Yean-Kuen Fang ,  Fu-Yuan Chen ,  Jiann-Ruey Chen

IPC分类号： H01L29/04 ,  H01L29/78

CPC分类号： G01J5/20 ,  H01L27/14679 ,  H01L27/14683

摘要： An infrared optical field effect transistor has been developed using a thin film of Lead Titanate (PbTiO.sub.3) deposited on a n/p.sup.+ Si substrate by RF magnetron sputtering. This transistor possesses excellent pyroelectric properties and can, therefore, be operated even at room temperature. The infrared optical field effect transistor has the following features associated with rapid bulk channel structure and higher mobility: 1. Can be operated at room temperature, unlike quantum type IR sensors which can only operate at very low temperature (-100.degree. C..about.-200.degree. C.), which results in higher costs. 2. High speed response with only 2.3 .mu.s of rise time. This is much faster than other types of thermal infrared optical field effect transistors. 3. Easy to fabricate an integrated sensor device.

摘要翻译： 已经开发了使用通过RF磁控溅射沉积在n / p + Si衬底上的钛酸铅（PbTiO 3）薄膜的红外光场效应晶体管。 该晶体管具有优异的热电性能，因此即使在室温下也能够运行。 红外光场效应晶体管具有与快速体积通道结构和更高迁移率相关的以下特征：1.可以在室温下操作，不像只能在非常低的温度（-100℃）下工作的量子型红外传感器。差分 - 200℃），这导致更高的成本。 2.高速响应，上升时间仅2.3μs。 这比其他类型的热红外光场效应晶体管要快得多。 易于制造集成的传感器设备。

公开(公告)号：US07048603B2

公开(公告)日：2006-05-23

申请号：US10720058

申请日：2003-11-25

申请人： Yean-Kuen Fang ,  William Lee ,  Jyh-Jier Ho ,  Shyh-Fann Ting ,  Shih-Fang Chen ,  Hsin-Che Chiang

发明人： Yean-Kuen Fang ,  William Lee ,  Jyh-Jier Ho ,  Shyh-Fann Ting ,  Shih-Fang Chen ,  Hsin-Che Chiang

IPC分类号： H01J9/22 ,  H01J1/62

CPC分类号： H01L51/002 ,  H01L51/0002 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/5048 ,  H01L51/56 ,  H01L2251/308

摘要： A method for manufacturing organic light-emitting diodes (OLEDs) is disclosed, by adding nitrogen (N2) into the material of a hole transport layer (HTL) and evaporating the nitrogen and the material of the hole transport layer while growing the hole transport layer, so as to dope nitrogen molecules into the hole transport layer. In the hole transport layer, the nitrogen molecules are impurities of higher energy level, and are used to catch holes while the holes transports and trap the holes in the hole transport layer, thereby obtaining an object of improving the luminance efficiency of the organic light-emitting diodes with lower cost.

摘要翻译： 公开了一种用于制造有机发光二极管（OLED）的方法，通过向空穴传输层（HTL）的材料中加入氮气（N 2/2）并蒸发氮气和孔的材料 传输层，同时生长空穴传输层，以便将氮分子掺入空穴传输层。 在空穴传输层中，氮分子是高能量的杂质，并且用于在空穴传输并捕获空穴传输层中的空穴的同时捕获孔，从而获得提高有机发光层的发光效率的目的， 发光二极管成本较低。