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公开(公告)号:US20070063630A1
公开(公告)日:2007-03-22
申请号:US11438010
申请日:2006-05-19
申请人: Cai-Lin Guo , Li Qian , Jie Tang , Liang Liu , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人: Cai-Lin Guo , Li Qian , Jie Tang , Liang Liu , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
CPC分类号: H01J61/305 , B82Y10/00 , H01J1/304 , H01J31/127 , H01J61/26 , H01J63/06 , H01J2201/30469
摘要: An exemplary field emission cathode includes an electrically conductive layer and an electron-emitting member formed thereon. The electron-emitting member includes an electron-emitting material configured for emitting electrons and a getter material configured for collecting outgassed materials. An exemplary planar light source includes an anode and a cathode spaced apart from the anode. The anode includes a first electrically conductive layer and a fluorescent layer formed on an inner surface of the first electrically conductive layer. The cathode includes a second electrically conductive layer and an electron-emitting member formed on an inner surface of the second electrically conductive layer which faces toward the fluorescent layer. The electron-emitting member includes an electron-emitting material and a getter material.
摘要翻译: 示例性场致发射阴极包括形成在其上的导电层和电子发射构件。 电子发射部件包括被配置为发射电子的电子发射材料和构造成用于收集排气的吸气材料。 示例性的平面光源包括与阳极间隔开的阳极和阴极。 阳极包括形成在第一导电层的内表面上的第一导电层和荧光层。 阴极包括形成在第二导电层的面向荧光层的内表面上的第二导电层和电子发射元件。 电子发射部件包括电子发射材料和吸气材料。
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公开(公告)号:US07353687B2
公开(公告)日:2008-04-08
申请号:US11228821
申请日:2005-09-16
申请人: Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
发明人: Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
IPC分类号: G01F25/00
CPC分类号: G01M3/007
摘要: A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
摘要翻译: 参考泄漏包括由金属材料,玻璃材料和陶瓷材料之一形成的泄漏层。 金属材料选自铜,镍和钼。 泄漏层包括限定在其中的多个基本上平行的泄漏通孔。 泄漏孔可以是圆柱形孔或多面孔。 每个泄漏通孔的长度优选不小于其直径的20倍。 每个泄漏通孔的直径通常在10nm至500nm的范围内。 每个泄漏通孔的长度通常在100nm至100μm的范围内。 参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。 泄漏孔具有基本相同的长度和直径。
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公开(公告)号:US20070069631A1
公开(公告)日:2007-03-29
申请号:US11453453
申请日:2006-06-14
申请人: Cai-Lin Guo , Li Qian , Jie Tang , Liang Liu , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人: Cai-Lin Guo , Li Qian , Jie Tang , Liang Liu , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号: H01J1/62
CPC分类号: H01J29/467 , H01J29/94
摘要: A field emission device (100) generally includes a front substrate (101) and a rear substrate (111) opposite thereto. The front substrate is formed with an anode (102). The rear substrate is formed with cathodes (112) facing the anode. A plurality of insulating portions (121) are formed on the rear substrate, each of which is arranged between every two neighboring cathodes. A plurality of gate electrodes are formed on top surfaces of the insulating portions 121. Each of the gate electrodes has a getter layer (123) thereon.
摘要翻译: 场发射装置(100)通常包括与其相对的前基板(101)和后基板(111)。 前基板形成有阳极(102)。 后基板由面向阳极的阴极(112)形成。 在后基板上形成有多个绝缘部分(121),每个绝缘部分布置在每两个相邻的阴极之间。 在绝缘部分121的顶表面上形成多个栅电极。 每个栅极电极上具有吸气剂层(123)。
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公开(公告)号:US07812513B2
公开(公告)日:2010-10-12
申请号:US11438010
申请日:2006-05-19
申请人: Cai-Lin Guo , Li Qian , Jie Tang , Liang Liu , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人: Cai-Lin Guo , Li Qian , Jie Tang , Liang Liu , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号: H01J1/62
CPC分类号: H01J61/305 , B82Y10/00 , H01J1/304 , H01J31/127 , H01J61/26 , H01J63/06 , H01J2201/30469
摘要: An exemplary field emission cathode includes an electrically conductive layer and an electron-emitting member formed thereon. The electron-emitting member includes an electron-emitting material configured for emitting electrons and a getter material configured for collecting outgassed materials. An exemplary planar light source includes an anode and a cathode spaced apart from the anode. The anode includes a first electrically conductive layer and a fluorescent layer formed on an inner surface of the first electrically conductive layer. The cathode includes a second electrically conductive layer and an electron-emitting member formed on an inner surface of the second electrically conductive layer which faces toward the fluorescent layer. The electron-emitting member includes an electron-emitting material and a getter material.
摘要翻译: 示例性场致发射阴极包括形成在其上的导电层和电子发射构件。 电子发射部件包括被配置为发射电子的电子发射材料和构造成用于收集排气的吸气材料。 示例性的平面光源包括与阳极间隔开的阳极和阴极。 阳极包括第一导电层和形成在第一导电层的内表面上的荧光层。 阴极包括形成在第二导电层的面向荧光层的内表面上的第二导电层和电子发射元件。 电子发射部件包括电子发射材料和吸气材料。
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公开(公告)号:US07745995B2
公开(公告)日:2010-06-29
申请号:US11432745
申请日:2006-05-10
申请人: Liang Liu , Jie Tang , Cai-Lin Guo , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人: Liang Liu , Jie Tang , Cai-Lin Guo , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号: H01J17/24
CPC分类号: H01L23/26 , H01J29/94 , H01J31/127 , H01J61/26 , H01J63/02 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要: A flat panel display (7) generally includes a front substrate (79) and a rear substrate (70) opposite thereto. The front substrate is formed with an anode (78). The rear substrate is formed with a cathode (71) facing the anode. Several sidewalls (72) are interposed between the front substrate and the rear substrate. A plurality of getter devices (82) are arranged on the front substrate. Thereby, a chamber between the front substrate and the rear substrate is maintained as a low-pressure vacuum. Each of the getter devices includes a base (820), a getter layer (822) comprised of non-evaporable getter material formed thereon, and securing wires (84) arranged on the base.
摘要翻译: 平板显示器(7)通常包括与其相对的前基板(79)和后基板(70)。 前基板由阳极(78)形成。 后基板形成有面向阳极的阴极(71)。 几个侧壁(72)插入在前基板和后基板之间。 多个吸气装置(82)布置在前基板上。 由此,将前基板和后基板之间的室保持为低压真空。 每个吸气装置包括基部(820),由其上形成的不可蒸发的吸气剂材料构成的吸气剂层(822)和布置在基座上的固定电线(84)。
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公开(公告)号:US20070075622A1
公开(公告)日:2007-04-05
申请号:US11309334
申请日:2006-07-27
申请人: Cai-Lin Guo , Li Qian , Jie Tang , Liang Liu , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人: Cai-Lin Guo , Li Qian , Jie Tang , Liang Liu , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
CPC分类号: H01J29/94 , H01J31/127
摘要: An anode structure (110) for a field emission display (100) includes a front substrate (111), an anode electrode (112) formed on the front substrate, a phosphor layer (113) formed on the anode electrode and a getter material (114). The phosphor layer has a plurality of separated phosphor strips (1131, 1132, 1133) each configured for emitting light of a respective single color. The getter material is arranged between adjacent phosphor strips thereof.
摘要翻译: 用于场发射显示器(100)的阳极结构(110)包括前基板(111),形成在前基板上的阳极电极(112),形成在阳极电极上的荧光体层(113)和吸气材料 114)。 荧光体层具有多个分离的荧光条(1131,1132,1133),每个被配置用于发射各自的单色光。 吸气材料布置在其相邻的磷光体条之间。
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公开(公告)号:US20060279197A1
公开(公告)日:2006-12-14
申请号:US11432745
申请日:2006-05-10
申请人: Liang Liu , Jie Tang , Cai-Lin Guo , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人: Liang Liu , Jie Tang , Cai-Lin Guo , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
CPC分类号: H01L23/26 , H01J29/94 , H01J31/127 , H01J61/26 , H01J63/02 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要: A flat panel display (7) generally includes a front substrate (79) and a rear substrate (70) opposite thereto. The front substrate is formed with an anode (78). The rear substrate is formed with a cathode (71) facing the anode. Several sidewalls (72) are interposed between the front substrate and the rear substrate. A plurality of getter devices (82) are arranged on the front substrate. Thereby, a chamber between the front substrate and the rear substrate is maintained as a low-pressure vacuum. Each of the getter devices includes a base (820), a getter layer (822) comprised of non-evaporable getter material formed thereon, and securing wires (84) arranged on the base.
摘要翻译: 平板显示器(7)通常包括与其相对的前基板(79)和后基板(70)。 前基板由阳极(78)形成。 后基板形成有面向阳极的阴极(71)。 几个侧壁(72)插入在前基板和后基板之间。 多个吸气装置(82)布置在前基板上。 由此,将前基板和后基板之间的室保持为低压真空。 每个吸气装置包括基底(820),由其上形成的不可蒸发的吸气剂材料构成的吸气剂层(822)和布置在基底上的固定电线(84)。
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公开(公告)号:US20060144120A1
公开(公告)日:2006-07-06
申请号:US11228821
申请日:2005-09-16
申请人: Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
发明人: Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
IPC分类号: G01F25/00
CPC分类号: G01M3/007
摘要: A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
摘要翻译: 参考泄漏包括由金属材料,玻璃材料和陶瓷材料之一形成的泄漏层。 金属材料选自铜,镍和钼。 泄漏层包括限定在其中的多个基本上平行的泄漏通孔。 泄漏孔可以是圆柱形孔或多面孔。 每个泄漏通孔的长度优选不小于其直径的20倍。 每个泄漏通孔的直径通常在10nm至500nm的范围内。 每个泄漏通孔的长度通常在100nm至100μm的范围内。 参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。 泄漏孔具有基本相同的长度和直径。
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公开(公告)号:US20060143895A1
公开(公告)日:2006-07-06
申请号:US11228967
申请日:2005-09-16
申请人: Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
发明人: Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
IPC分类号: B21B1/46
CPC分类号: C25D1/08 , B82Y15/00 , B82Y30/00 , C04B35/62231 , C04B35/6224 , C04B35/62272 , C04B35/62286 , C04B2235/3284 , C04B2235/3418 , C04B2235/526 , C04B2235/5264 , C23F4/00 , G01M3/007 , G01M3/207 , Y10T29/4998 , Y10T29/49982
摘要: A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.
摘要翻译: 用于制造参考泄漏的方法包括以下步骤:(a)制备基底; (b)在所述衬底上形成图案化催化剂层,所述图案化催化剂层包含一个或多个催化剂块; (c)通过化学气相沉积法从相应的催化剂块形成一个或多个细长的纳米结构; (d)在所述基板上形成一个或多个细长纳米结构部分或完全嵌入其中的金属材料,玻璃材料和陶瓷材料之一的泄漏层; 和(e)移除所述一个或多个细长纳米结构和所述基底以获得其中限定有一个或多个泄漏孔的参考泄漏。
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公开(公告)号:US07757371B2
公开(公告)日:2010-07-20
申请号:US11228967
申请日:2005-09-16
申请人: Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
发明人: Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
IPC分类号: B21B1/46 , B21B13/22 , B22D11/126 , B22D11/128 , B23P17/00 , B23P25/00
CPC分类号: C25D1/08 , B82Y15/00 , B82Y30/00 , C04B35/62231 , C04B35/6224 , C04B35/62272 , C04B35/62286 , C04B2235/3284 , C04B2235/3418 , C04B2235/526 , C04B2235/5264 , C23F4/00 , G01M3/007 , G01M3/207 , Y10T29/4998 , Y10T29/49982
摘要: A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.
摘要翻译: 用于制造参考泄漏的方法包括以下步骤:(a)制备基底; (b)在所述衬底上形成图案化催化剂层,所述图案化催化剂层包含一个或多个催化剂块; (c)通过化学气相沉积法从相应的催化剂块形成一个或多个细长的纳米结构; (d)在所述基板上形成一个或多个细长纳米结构部分或完全嵌入其中的金属材料,玻璃材料和陶瓷材料之一的泄漏层; 和(e)移除所述一个或多个细长纳米结构和所述基底以获得其中限定有一个或多个泄漏孔的参考泄漏。
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