公开(公告)号：US06449132B1

公开(公告)日：2002-09-10

申请号：US09522517

申请日：2000-03-10

申请人： Liu Yang ,  Jumna Ramdular ,  Sara L. Gordon ,  Ralph D. Knox ,  John E. Dzarnoski

发明人： Liu Yang ,  Jumna Ramdular ,  Sara L. Gordon ,  Ralph D. Knox ,  John E. Dzarnoski

IPC分类号： G11B539

CPC分类号： G11B5/3903 ,  G11B5/3109

摘要： A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21% to 24% by volume of H. The dielectric film is formed by plasma enhanced chemical vapor deposition (PECVD) at relatively low temperatures. A plurality of gases capable of reacting to form silicon nitride are introduced into a PECVD reactor. An electric field is generated in the reactor to produce a plasma. The gases in the reactor react in the presence of the electrical field to form a silicon nitride dielectric film.

摘要翻译： 根据本发明的用于MR磁头的氮化硅电介质膜包含约38％至44体积％的Si，约35％至37体积％的N和约21％至24％的 电介质膜通过等离子体增强化学气相沉积（PECVD）在较低温度下形成。 将能够反应形成氮化硅的多种气体引入PECVD反应器。 在反应器中产生电场以产生等离子体。 反应器中的气体在存在电场的情况下反应形成氮化硅电介质膜。