Single Stage Ramped Power Amplifiers
    1.
    发明申请

    公开(公告)号:US20190013783A1

    公开(公告)日:2019-01-10

    申请号:US15726187

    申请日:2017-10-05

    发明人: Orest Fedan

    IPC分类号: H03F3/20

    摘要: Single stage ramped power amplifiers in accordance with embodiments of the invention are disclosed. In one embodiment, a single stage ramped power amplifier includes a RF transceiver, a ramp voltage, a power supply, and an output circuit, wherein the ramp voltage is coupled to a resistor that is coupled to a first inductor, the power supply is coupled to a second inductor, the RF transceiver is coupled to the second inductor and a first capacitor, the first capacitor is coupled to a PIN diode, the PIN diode is coupled to the first inductor and a second capacitor, the second capacitor is coupled to a first transistor, the first transistor is coupled to a third capacitor, the third capacitor is coupled to a third inductor, the third inductor is coupled to a second transistor, and the second transistor is coupled to the output circuit.

    Coaxial Helix Antennas
    2.
    发明申请

    公开(公告)号:US20180219280A1

    公开(公告)日:2018-08-02

    申请号:US15422124

    申请日:2017-02-01

    发明人: Orest Fedan

    摘要: Coaxial helix antennas in accordance with embodiments of the invention are disclosed. In one embodiment, a coaxial helix antenna includes an inner element having an inner element radius and an inner element length and an outer element having an outer element radius and an outer element length, wherein the outer element radius is greater than the inner element radius, wherein the inner element is driven by a first conductor, wherein the outer element is driven by a second conductor, and wherein the outer element is disposed outside of the inner element such that a portion of the inner element extends beyond the outer element and includes an inner radiating element.