公开(公告)号：US20250107090A1

公开(公告)日：2025-03-27

申请号：US18967343

申请日：2024-12-03

Applicant: Lodestar Licensing Group LLC

Inventor： Collin Howder ,  Gordon A. Haller

IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: Some embodiments include an integrated structure having a stack of memory cell levels. A pair of channel-material-pillars extend through the stack. A source structure is under the stack. The source structure includes a portion having an upper region, a lower region, and an intermediate region between the upper and lower regions. The upper and lower regions have a same composition and join to one another at edge locations. The intermediate region has a different composition than the upper and lower regions. The edge locations are directly against the channel material of the channel-material-pillars. Some embodiments include methods of forming an integrated assembly.

公开(公告)号：US12167600B2

公开(公告)日：2024-12-10

申请号：US18140516

申请日：2023-04-27

Applicant: Lodestar Licensing Group LLC

Inventor： Collin Howder ,  Gordon A. Haller

IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: Some embodiments include an integrated structure having a stack of memory cell levels. A pair of channel-material-pillars extend through the stack. A source structure is under the stack. The source structure includes a portion having an upper region, a lower region, and an intermediate region between the upper and lower regions. The upper and lower regions have a same composition and join to one another at edge locations. The intermediate region has a different composition than the upper and lower regions. The edge locations are directly against the channel material of the channel-material-pillars. Some embodiments include methods of forming an integrated assembly.