公开(公告)号：US12002759B2

公开(公告)日：2024-06-04

申请号：US17660669

申请日：2022-04-26

Applicant: Lodestar Licensing Group LLC

Inventor： Jordan D. Greenlee ,  Lifang Xu ,  Rita J. Klein ,  Xiao Li ,  Everett A. McTeer

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L23/522 ,  H10B41/27 ,  H10B41/41

CPC classification number: H01L23/53266 ,  H01L21/76846 ,  H01L23/5226 ,  H01L23/562 ,  H10B41/27 ,  H10B41/41

Abstract: An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.

公开(公告)号：US20240290722A1

公开(公告)日：2024-08-29

申请号：US18652551

申请日：2024-05-01

Applicant: Lodestar Licensing Group LLC

Inventor： Jordan D. Greenlee ,  Lifang Xu ,  Rita J. Klein ,  Xiao Li ,  Everett A. McTeer

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L23/522 ,  H10B41/27 ,  H10B41/41

CPC classification number: H01L23/53266 ,  H01L21/76846 ,  H01L23/5226 ,  H01L23/562 ,  H10B41/27 ,  H10B41/41

Abstract: An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.