公开(公告)号：US08089051B2

公开(公告)日：2012-01-03

申请号：US12711966

申请日：2010-02-24

申请人： Luca Grella ,  Regina Freed ,  Mark A. McCord

发明人： Luca Grella ,  Regina Freed ,  Mark A. McCord

IPC分类号： G21K1/08

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31789

摘要： One embodiment relates to a method of controllably reflecting electrons from an array of electron reflectors. An incident electron beam is formed from an electron source, and the incident beam is directed to the array of electron reflectors. A first plurality of the reflectors is configured to reflect electrons in a first reflective mode such that the reflected electrons exiting the reflector form a focused beam. A second plurality of the reflectors is configured to reflect electrons in a second reflective mode such that the reflected electrons exiting the reflector are defocused. Another embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. Other embodiments, aspects and features are also disclosed.

摘要翻译： 一个实施例涉及从电子反射器阵列可控地反射电子的方法。 入射电子束由电子源形成，入射光束被引导到电子反射体阵列。 第一多个反射器被配置为以第一反射模式反射电子，使得离开反射器的反射电子形成聚焦光束。 第二多个反射器被配置为以第二反射模式反射电子，使得离开反射器的反射电子散焦。 另一个实施例涉及用于反射电子束光刻的动态图案发生器的装置。 还公开了其它实施例，方面和特征。

公开(公告)号：US20200098633A1

公开(公告)日：2020-03-26

申请号：US16691947

申请日：2019-11-22

申请人： Ying Zhang ,  Abhijit Basu Mallick ,  Regina Freed ,  Nitin K. Ingle ,  Uday Mitra ,  Ho-yung David Hwang

发明人： Ying Zhang ,  Abhijit Basu Mallick ,  Regina Freed ,  Nitin K. Ingle ,  Uday Mitra ,  Ho-yung David Hwang

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/48

摘要： A first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is on the first insulating layer. A second metallization layer comprises a set of second conductive lines on a third insulating layer and on the second insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. A via between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines.