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公开(公告)号：US11563302B2
公开(公告)日：2023-01-24
申请号：US17110195
申请日：2020-12-02
申请人： Lumentum Japan, Inc.
发明人： Akira Nakanishi , Noriko Sasada , Takayuki Nakajima , Yuji Sekino
摘要： A ridge type semiconductor optical device includes a first conductivity type semiconductor layer including at least a first stripe section; an active layer including at least an active stripe section on the first stripe section; a second conductivity type semiconductor layer including at least a second stripe section on the active stripe section; a ridge electrode on the second stripe section; an insulation film on an end face of each of the first stripe section, the active stripe section, and the second stripe section; and a film heater on the insulation film, the film heater overlapping with the end face of at least the first stripe section.
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公开(公告)号：US11233174B2
公开(公告)日：2022-01-25
申请号：US16811559
申请日：2020-03-06
申请人： Lumentum Japan, Inc.
发明人： Masahiro Ebisu , Takayuki Nakajima , Yuji Sekino
摘要： A semiconductor optical device includes an element structure layer that includes a mesa stripe extending in a first direction; an electrode film that covers at least an upper surface of the mesa stripe; an electrode pad portion that covers a part of a first region positioned in a second direction, intersecting the first direction, relative to the mesa stripe on an upper surface of the element structure layer and is electrically connected to the electrode film; a first dummy electrode that covers another part of the first region and is electrically insulated from the electrode film; and a second dummy electrode that covers at least a part of a second region positioned in a third direction, opposite to the second direction, relative to the mesa stripe on the upper surface of the element structure layer and is electrically insulated from the electrode film, wherein the first dummy electrode includes a first portion disposed in the first direction relative to the electrode pad portion and a second portion disposed in a fourth direction, opposite to the first direction, relative to the electrode pad portion.
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公开(公告)号：US11196232B2
公开(公告)日：2021-12-07
申请号：US16845235
申请日：2020-04-10
申请人： Lumentum Japan, Inc.
发明人： Takayuki Nakajima , Atsushi Nakamura , Yuji Sekino
摘要： A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.
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公开(公告)号：US11112571B2
公开(公告)日：2021-09-07
申请号：US16559198
申请日：2019-09-03
申请人： Lumentum Japan, Inc.
发明人： Yuji Sekino , Akira Nakanishi , Takayuki Nakajima
摘要： An optical subassembly may include a plurality of optical semiconductor devices arrayed such that a plurality of light beams respectively traveling in parallel in a first direction are emitted therefrom or incident thereon. The optical subassembly may also include a carrier on which the plurality of optical semiconductor devices are mounted. Adjacent ones of the plurality of optical semiconductor devices may be located at positions shifted in a second direction orthogonal to the first direction and may be shifted in the first direction so as not to face each other in the second direction.
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