公开(公告)号：US11798639B2

公开(公告)日：2023-10-24

申请号：US17531825

申请日：2021-11-22

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Guan-Wei Wu ,  Yao-Wen Chang ,  Chun-Liang Lu ,  I-Chen Yang

IPC: G11C7/00 ,  G11C16/34 ,  G11C16/08 ,  G11C16/26 ,  G11C16/24 ,  G11C16/04

CPC classification number: G11C16/3427 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/0483

Abstract: A memory device and an operation method thereof are disclosed. The memory device includes a P-well region, a common source line, a ground selection line, at least one dummy ground selection line, a plurality of word lines, at least one dummy string selection line, a string selection line, at least one bit line and at least one memory string. The gates of a plurality of memory cells of the memory string are connected to the word lines. The operation method includes the following steps. Performing a read operation and applying a read voltage on the selected word line. Applying a pass voltage on other unselected word lines and the ground selection lines, etc. Before ending of the read operation, firstly decreasing voltages of the string selection line and the dummy string selection line in advance, then increasing voltage of the bit line.