公开(公告)号：US20170200510A1

公开(公告)日：2017-07-13

申请号：US14994472

申请日：2016-01-13

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Chun Hsiung HUNG ,  Shih Chou JUAN ,  Nai-Ping KUO ,  Yi Chun LIU

IPC: G11C29/50

CPC classification number: G11C29/50 ,  G11C7/02 ,  G11C11/5642 ,  G11C16/3427 ,  G11C29/24 ,  G11C29/50004 ,  G11C29/52

Abstract: A method for reading data from memory cells of a target word line in a semiconductor memory includes determining a disturbance status of the target word line. The disturbance status reflects a disturbance of a neighboring word line on the memory cells of the target word line. The method further includes determining a read voltage for the target word line according to the disturbance status of the target word line and applying the read voltage to the memory cells of the target word line.