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公开(公告)号:US20190080750A1
公开(公告)日:2019-03-14
申请号:US15698812
申请日:2017-09-08
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Shaw-Hung Ku , Ta-Wei Lin , Cheng-Hsien Cheng , Chih-Wei Lee , Wen-Jer Tsai
CPC classification number: G11C11/5628 , G11C16/3459 , G11C2211/5621
Abstract: A method for programming a non-volatile memory and a memory system are provided. Each of multiple cells of the non-volatile memory stores data having at least 2 bits. The method includes the following steps. At least one programming pulse is provided for programming a target cell of the cells. At least one program-verify pulse is provided for verifying whether the target cell is successfully programmed. It is determined that whether a threshold voltage of the target cell is greater than or equal to a program-verify voltage. When the threshold voltage is greater than or equal to the program-verify voltage, the target cell is set as successfully programmed. Next, a post-verifying operation is performed to the successfully programmed cell. The post-verifying operation includes determining whether the threshold voltage of the target cell is greater than or equal to a post-verifying voltage.
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公开(公告)号:US10460797B2
公开(公告)日:2019-10-29
申请号:US15698812
申请日:2017-09-08
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Shaw-Hung Ku , Ta-Wei Lin , Cheng-Hsien Cheng , Chih-Wei Lee , Wen-Jer Tsai
Abstract: A method for programming a non-volatile memory and a memory system are provided. Each of multiple cells of the non-volatile memory stores data having at least 2 bits. The method includes the following steps. At least one programming pulse is provided for programming a target cell of the cells. At least one program-verify pulse is provided for verifying whether the target cell is successfully programmed. It is determined that whether a threshold voltage of the target cell is greater than or equal to a program-verify voltage. When the threshold voltage is greater than or equal to the program-verify voltage, the target cell is set as successfully programmed. Next, a post-verifying operation is performed to the successfully programmed cell. The post-verifying operation includes determining whether the threshold voltage of the target cell is greater than or equal to a post-verifying voltage.
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