公开(公告)号：US20160123905A1

公开(公告)日：2016-05-05

申请号：US14532773

申请日：2014-11-04

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Hsiang-Chou Liao ,  Tuung Luoh ,  Ling-Wuu Yang ,  Tahone Yang ,  Kuang-Chao Chen

IPC: G01N23/203 ,  H01J37/252 ,  H01L21/66

CPC classification number: G01N23/203 ,  H01J2237/2805 ,  H01J2237/2817 ,  H01L22/12

Abstract: Disclosed embodiments are generally related to semiconductor device inspection. One such embodiment involves positioning a detector at a distance from a surface of the semiconductor device being inspected and applying an energy to the semiconductor device. In the disclosed embodiment, the detector receives back-scattered energy resulting from applying the energy to the semiconductor device and the resultant back-scattered energy is processed and analyzed to determine whether defects are beneath the surface of the semiconductor device. The magnitude of the applied energy and the distance between the detector and the surface of the semiconductor device are selected so as to allow back-scattered electrons returned from applying to be effectively received by the detector.

Abstract translation: 公开的实施例通常涉及半导体器件检查。 一个这样的实施例涉及将检测器定位在距待检查的半导体器件的表面一定距离处，并向半导体器件施加能量。 在所公开的实施例中，检测器接收由向半导体器件施加能量所产生的反向散射能量，并且对所得到的反向散射能量进行处理和分析，以确定缺陷是否在半导体器件的表面之下。 选择所施加的能量的大小以及检测器与半导体器件的表面之间的距离，以便允许从施加返回的反向散射电子被检测器有效地接收。