公开(公告)号：US20210117187A1

公开(公告)日：2021-04-22

申请号：US17026347

申请日：2020-09-21

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Hung-Sheng CHANG ,  Han-Wen HU ,  Yueh-Han WU ,  Tse-Yuan WANG ,  Yuan-Hao CHANG ,  Tei-Wei KUO

IPC: G06F9/30 ,  G06F7/544 ,  G06F9/345

Abstract: A computing in memory method for a memory device is provided. The computing in memory method includes: based on a stride parameter, unfolding a kernel into a plurality of sub-kernels and a plurality of complement sub-kernels; based on the sub-kernels and the complement sub-kernels, writing a plurality of weights into a plurality of target memory cells of a memory array of the memory device; inputting an input data into a selected word line of the memory array; performing a stride operation in the memory array; temporarily storing a plurality of partial sums; and summing the stored partial sums into a stride operation result when all operation cycles are completed.