公开(公告)号：US11354123B2

公开(公告)日：2022-06-07

申请号：US17026347

申请日：2020-09-21

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Hung-Sheng Chang ,  Han-Wen Hu ,  Yueh-Han Wu ,  Tse-Yuan Wang ,  Yuan-Hao Chang ,  Tei-Wei Kuo

IPC: G06F7/544 ,  G06F9/345 ,  G06F9/30

Abstract: A computing in memory method for a memory device is provided. The computing in memory method includes: based on a stride parameter, unfolding a kernel into a plurality of sub-kernels and a plurality of complement sub-kernels; based on the sub-kernels and the complement sub-kernels, writing a plurality of weights into a plurality of target memory cells of a memory array of the memory device; inputting an input data into a selected word line of the memory array; performing a stride operation in the memory array; temporarily storing a plurality of partial sums; and summing the stored partial sums into a stride operation result when all operation cycles are completed.