公开(公告)号：US20250105213A1

公开(公告)日：2025-03-27

申请号：US18474231

申请日：2023-09-26

Applicant: MACRONIX International Co., Ltd.

Inventor： Shao-En Chang ,  Tzung-Ting Han ,  Meng-Hsuan Weng ,  Chen-Yu Cheng

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/544 ,  H10B80/00

Abstract: Provided is a semiconductor device for manufacturing a 3D NAND flash memory with high capacity and high performance. The semiconductor device includes: a first device structure layer on a substrate; an interconnect structure layer on the first device structure layer, which includes first pads at a surface thereof; a second device structure layer on the interconnect structure layer, which includes second pads at a surface thereof; a pattern structure at an interface between the interconnect structure layer and the second device structure layer; a first seal ring at the surface of the interconnect structure layer, which surrounds the pattern structure; a second seal ring at the surface of the second device structure layer, which surrounds the pattern structure. The first pad is connected to the second pad, and the first seal ring is connected to the second seal ring.