公开(公告)号：US3719933A

公开(公告)日：1973-03-06

申请号：US12867171

申请日：1971-03-29

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： WAKABAYASHI T ,  SUGIHARA K ,  KINUGASA T ,  HOZUMI S

IPC: H01C7/10 ,  G11C13/02 ,  H01L45/00 ,  G11C11/46 ,  H01L3/00 ,  H01L9/00

CPC classification number: H01L45/04 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01C7/108 ,  H01C17/06533 ,  H01L45/14 ,  H01L45/1608

Abstract: A memory device for memorizing an electric signal. Said memory device has an organic resin film having lead dioxide particles dispersed therein, a positive electrode, and a negative electrode. The memory device has a high electrical resistance state and a low electrical resistance state. An applied electric signal at a critical voltage and with forward polarity can transform the memory device from the high electrical resistance state to the low electrical resistance state. An applied electric erasing signal at a pre-determined voltage with reverse polarity can return the memory device from the low electrical resistance state to the high electrical resistance state.

Abstract translation: 一种用于存储电信号的存储装置。 所述记忆装置具有分散有二氧化铅颗粒的有机树脂膜，正极和负极。 存储器件具有高电阻状态和低电阻状态。 在临界电压和正极性下施加的电信号可以将存储器件从高电阻状态转换到低电阻状态。 以相反极性的预定电压施加的电擦除信号可以将存储器件从低电阻状态返回到高电阻状态。