公开(公告)号：US11955954B2

公开(公告)日：2024-04-09

申请号：US17606945

申请日：2020-03-19

Applicant: LS ELECTRIC CO., LTD.

Inventor： Woonghyeob Song ,  Jungwook Sim ,  Chaeyoon Bae

IPC: H03K17/081 ,  H01C7/12 ,  H02H9/00 ,  H02H9/04 ,  H01C7/108 ,  H01C7/112

CPC classification number: H03K17/08104 ,  H01C7/12 ,  H02H9/005 ,  H02H9/04 ,  H01C7/108 ,  H01C7/112

Abstract: The present disclosure relates to a semiconductor circuit breaker and, more specifically, to a semiconductor circuit breaker in which a protection circuit is modularized and thus maintenance and repair can be easily done. A semiconductor circuit breaker according to an embodiment of the present disclosure comprises: a main circuit unit connected between a power source and a load and having a semiconductor switch; an outer box equipped with the main circuit unit and having a module accommodation unit outside thereof; and a protection module detachably accommodated in the module accommodation unit.

公开(公告)号：US20180174719A1

公开(公告)日：2018-06-21

申请号：US15572635

申请日：2015-05-11

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： AXEL PREIDEL

IPC: H01C7/12 ,  H01C1/16 ,  H02H1/00 ,  H02H9/04 ,  G01R19/165 ,  G01K13/00

CPC classification number: H01C7/12 ,  G01K13/00 ,  G01R19/1659 ,  H01C1/16 ,  H01C7/108 ,  H02H1/0007 ,  H02H9/04 ,  H02H9/044

Abstract: An overvoltage arrester system for protecting an electrical installation from an overvoltage or impermissible amount of energy, includes a first metal oxide arrester in a first current path and a second metal oxide arrester in a second current path connected in parallel with the first current path. In order to ensure that the overvoltage arrester system is suitable for arresting especially high amounts of energy, in particular from pulsed energy inputs, while at the same time being especially fail-safe, in a current range, a characteristic voltage/current curve of the first metal oxide arrester has a lower voltage than a characteristic voltage/current curve of the second metal oxide arrester at the same current, and the first current path has a switch. An arrangement having an electrical installation and the overvoltage arrester system is also provided.

公开(公告)号：US09870851B2

公开(公告)日：2018-01-16

申请号：US15149652

申请日：2016-05-09

Applicant: International Business Machines Corporation

Inventor： Jeffrey P. Gambino ,  Richard S. Graf ,  Sudeep Mandal

IPC: H01C17/065 ,  H01C17/28 ,  H01C17/245 ,  H01C7/10 ,  H01C7/112 ,  H01C7/12 ,  H01C7/00 ,  H01L27/02 ,  H01L49/02 ,  H01L29/06 ,  H01L21/762 ,  H01C17/00 ,  H01L23/522 ,  H01L23/528 ,  H01L21/02 ,  H01L23/62 ,  H01L23/64 ,  H01C17/12

CPC classification number: H01C7/108 ,  H01C7/006 ,  H01C7/1013 ,  H01C7/112 ,  H01C7/12 ,  H01C17/006 ,  H01C17/06553 ,  H01C17/12 ,  H01C17/245 ,  H01C17/288 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/762 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/62 ,  H01L23/647 ,  H01L27/0248 ,  H01L28/20 ,  H01L28/24 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

公开(公告)号：US20150170806A1

公开(公告)日：2015-06-18

申请号：US14547388

申请日：2014-11-19

Applicant: PHOENIX CONTACT GMBH & CO. KG

Inventor： Jan-Erik SCHMUTZ ,  Friedrich-Eckhard BRAND

IPC: H01C7/12 ,  H01C1/14 ,  H01C7/108

CPC classification number: H01C7/126 ,  H01C1/084 ,  H01C1/14 ,  H01C1/142 ,  H01C7/102 ,  H01C7/108 ,  H01H85/0241 ,  H01H85/12

Abstract: The object of the invention is a multi-contact element for a varistor wherein the multi-contact element has a sandwich structure, wherein the sandwich structure has two or more contact elements in a lowermost layer, and wherein the sandwich structure has at least one common connection electrode in an uppermost layer, wherein a first intermediate layer made of an electrically insulating layer of material is provided at least in segments between the lowermost layer (US) and the uppermost layer, wherein fuses are located in the first intermediate layer that are configured such that they are capable of sustaining a specified surge current, the specified surge current per fuse being less than the specified surge current of the varistor, wherein the fuses are embodied as vias within the first intermediate layer, wherein the fuses in the first intermediate layer are in direct electrical contact with the common connection electrode, wherein each of the fuses is in direct or indirect electrical contact with a subset of the contact elements (KE1, KE2), wherein the fuses provide blow-out channels in the first intermediate layer so that in the event of a thermal overloading of a fuse of the first intermediate layer, the affected fuse can vaporize through the blow-out channel.

Abstract translation: 本发明的目的是用于变阻器的多接触元件，其中多接触元件具有夹层结构，其中夹层结构在最下层具有两个或更多个接触元件，并且其中夹层结构具有至少一个共同的 连接电极，其中由电绝缘层材料制成的第一中间层至少在最下层（US）和最上层之间的段中提供，其中保险丝位于配置的第一中间层中 使得它们能够维持指定的浪涌电流，每个保险丝的指定浪涌电流小于压敏电阻器的指定浪涌电流，其中保险丝被实施为第一中间层内的通孔，其中第一中间层中的保险丝 与公共连接电极直接电接触，其中每个保险丝是直接或间接的电气 与所述接触元件（KE1，KE2）的子集接触，其中所述熔断器在所述第一中间层中提供吹出通道，使得在所述第一中间层的保险丝的热过载的情况下，受影响的保险丝可以蒸发 通过吹出通道。

公开(公告)号：US08421582B2

公开(公告)日：2013-04-16

申请号：US13407790

申请日：2012-02-29

Applicant: Kumiko Hiehata ,  Takahiro Sumi ,  Jun Adachi ,  Jun Urakawa ,  Takayuki Tsukizawa

Inventor： Kumiko Hiehata ,  Takahiro Sumi ,  Jun Adachi ,  Jun Urakawa ,  Takayuki Tsukizawa

IPC: H01C7/10

CPC classification number: H01T4/12 ,  H01C7/108 ,  H01C7/12 ,  H01L23/60 ,  H01L27/0288 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01T1/20 ,  H01T21/00 ,  H01L2924/00

Abstract: An ESD protection device includes opposed electrodes in a ceramic base material and a discharge auxiliary electrode in contact with each of the opposed electrodes which is arranged so as to provide a bridge from the opposed electrode on one side to the opposed electrode on the other side, the discharge auxiliary electrode includes metallic particles, semiconductor particles, and a vitreous material, and bonding is provided through the vitreous material between the metallic particles, between the semiconductor particles, and between the metallic particles and the semiconductor particles. The metallic particles have an average particle diameter X of about 1.0 μm or more, and the relationship between the thickness Y of the discharge auxiliary electrode and the average particle diameter X of the metallic particles satisfies about 0.5≦Y/X≦ about 3.

Abstract translation: ESD保护装置包括陶瓷基材中的相对电极和与每个相对电极接触的放电辅助电极，其布置成提供从一侧的相对电极到另一侧的相对电极的桥， 放电辅助电极包括金属颗粒，半导体颗粒和玻璃质材料，并且通过金属颗粒之间，半导体颗粒之间以及金属颗粒和半导体颗粒之间的玻璃质材料提供接合。 金属颗粒的平均粒径X为约1.0μm以上，放电辅助电极的厚度Y与金属粒子的平均粒径X之间的关系为约0.5＆lt; 1lE; Y / X＆ 约3。

公开(公告)号：US07994894B2

公开(公告)日：2011-08-09

申请号：US12426589

申请日：2009-04-20

Applicant: Hiroyuki Sato ,  Makoto Numata ,  Yo Saito ,  Hitoshi Tanaka ,  Goro Takeuchi ,  Osamu Taguchi ,  Ryuichi Tanaka

Inventor： Hiroyuki Sato ,  Makoto Numata ,  Yo Saito ,  Hitoshi Tanaka ,  Goro Takeuchi ,  Osamu Taguchi ,  Ryuichi Tanaka

IPC: H01C7/10

CPC classification number: H01C7/108 ,  H01C7/1006 ,  H01L23/62 ,  H01L23/647 ,  H01L33/641 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16268 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A varistor having a favorable heat-dissipating property is provided.In the varistor, a composite part having a favorable heat-dissipating property formed by a composite material composed of ZnO and Ag is arranged between main faces of a varistor matrix. Therefore, the heat transmitted from a semiconductor light-emitting device to a varistor part through an outer electrode can rapidly be transferred toward a main face on the opposite side through the composite part. In this varistor, side faces excluding inner side faces are exposed at side faces of the varistor matrix. Such a structure yields a favorable heat-dissipating property.

Abstract translation: 提供具有良好的散热特性的变阻器。 在变阻器中，通过由ZnO和Ag组成的复合材料形成的具有良好的散热特性的复合部件设置在压敏电阻矩阵的主面之间。 因此，通过外部电极从半导体发光元件传递到变阻器部分的热量可以快速地通过复合部件向相反侧的主面转移。 在该压敏电阻中，除了内侧面的侧面在压敏电阻矩阵的侧面露出。 这种结构产生良好的散热性能。

公开(公告)号：US20090142590A1

公开(公告)日：2009-06-04

申请号：US12340795

申请日：2008-12-22

Applicant: Daniel Qi Tan ,  Darren Michael Stohr ,  Wei Zhang

Inventor： Daniel Qi Tan ,  Darren Michael Stohr ,  Wei Zhang

IPC: C04B35/10 ,  C04B35/14 ,  C04B35/453 ,  B32B5/00

CPC classification number: C04B35/453 ,  B82Y30/00 ,  C01G9/00 ,  C01P2002/52 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/40 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3241 ,  C04B2235/3262 ,  C04B2235/3265 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3277 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/666 ,  C04B2235/667 ,  C04B2235/785 ,  C04B2235/85 ,  H01C7/108 ,  H01C7/112 ,  Y10T428/265

Abstract: A method includes contacting a transition metal oxide, a sintering additive, and a grain growth inhibitor additive to form a mixture. The transition metal oxide include particles that have an average diameter less than about 1 micrometer and sintering the mixture to a temperature profile that is sufficiently high that a sintered mass is formed from the mixture. The sintering includes at least one of a microwave sintering or a spark plasma sintering. The thermal profile is less than about 1050 degrees Celsius.

Abstract translation: 一种方法包括使过渡金属氧化物，烧结添加剂和晶粒生长抑制剂添加剂接触以形成混合物。 过渡金属氧化物包括平均直径小于约1微米的颗粒，并将该混合物烧结到足够高的温度分布，使得从混合物形成烧结体。 烧结包括微波烧结或放电等离子体烧结中的至少一种。 热分布小于约1050摄氏度。

公开(公告)号：US20080286898A1

公开(公告)日：2008-11-20

申请号：US11798800

申请日：2007-05-17

Applicant: Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun Nan Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Wei-Cheng Lien

Inventor： Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun Nan Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Wei-Cheng Lien

IPC: H01L21/02 ,  H01B1/02

CPC classification number: H01C7/1006 ,  H01C7/108 ,  H01C7/112 ,  H01C7/115 ,  H01C7/18 ,  H01L27/0288 ,  H01L28/20 ,  Y10T428/2985 ,  Y10T428/2989 ,  Y10T428/2991

Abstract: A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.

Abstract translation: 具有适于制造具有优异电性能的变阻器的核 - 壳微结构的材料组合物，所述材料组合物的芯 - 壳微结构至少包括由导电或半导电材料制成的芯结构和制成的壳形结构 从玻璃材料包裹芯结构，并且可以通过精确控制芯结构的晶粒尺寸和绝缘体的厚度和绝缘电阻来确定和指定压敏电阻在低温烧结过程中的电性能 层的材料组成的贝壳结构。

公开(公告)号：US20080129440A1

公开(公告)日：2008-06-05

申请号：US11705680

申请日：2007-02-13

Applicant: Chang-Wei Ho

Inventor： Chang-Wei Ho

IPC: H01H85/04

CPC classification number: H01C7/108 ,  H01C1/08 ,  H01H37/761

Abstract: A metal oxide varistor integrally formed with a heat protection structure that will automatically go to open circuit in conditions of overheating due to sustained over-voltages. The metal oxide varistor integrally formed with a heat protection structure has a body, an insulation bracket, a number of terminals and a fuse. The insulation bracket is deposited on the body and has a number of slots. The fuse connects to the body and one of the terminals. The fuse is mounted one of the slots of the insulation bracket. The fuse reacts to the overheating timely and the melting fuse spreads quickly with the assistance of capillary action evolved by the slots of the insulation bracket to speed up the action to go to open circuit in against damage due to sustained over-voltages.

公开(公告)号：US20070140891A1

公开(公告)日：2007-06-21

申请号：US11541562

申请日：2006-10-03

Applicant: Mehrdad Hassanzadeh ,  Celine Machado-Bailly ,  Renaud Metz ,  Ramon Puyane

Inventor： Mehrdad Hassanzadeh ,  Celine Machado-Bailly ,  Renaud Metz ,  Ramon Puyane

IPC: C22C1/05

CPC classification number: C04B35/457 ,  C01B13/322 ,  C04B35/6265 ,  C04B35/62665 ,  C04B35/6268 ,  C04B35/628 ,  C04B35/62805 ,  C04B35/653 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3267 ,  C04B2235/3277 ,  C04B2235/40 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/5436 ,  C04B2235/77 ,  C04B2235/96 ,  H01C7/108 ,  H01C17/06533

Abstract: Process for the preparation of a semiconducting ceramic based on doped tin oxide SnO2 by a process of “PADO” (Precursor Alloy Direct Oxidation) type applied to an alloy of tin and of doping metals or by a process of “PADO” type applied to tin, the doping metals being added in the form of oxides to the powder subjected to sintering.

Abstract translation: 通过“PADO”（前体合金直接氧化）方法制备基于掺杂的氧化锡SnO 2的半导体陶瓷的方法，该方法应用于锡和掺杂金属的合金或通过工艺 的“PADO”型，将掺杂金属以氧化物的形式加入到经过烧结的粉末中。