公开(公告)号：US20190164911A1

公开(公告)日：2019-05-30

申请号：US16157274

申请日：2018-10-11

Applicant: MEDIATEK INC.

Inventor： Chung-We PAN ,  Ching-Hung FU ,  Kuo-Lung FAN

IPC: H01L23/00 ,  H01L21/66 ,  H01L21/765 ,  H01L29/40 ,  G01R31/28 ,  G01R27/02

Abstract: A seal ring structure is provided. The seal ring structure includes a seal ring on a semiconductor substrate. The seal ring includes a first interconnect element and a plurality of second interconnect elements. The first interconnect element is formed on a shallow trench isolation (STI) region and a first group of P-type doping regions over the semiconductor substrate. The second interconnect elements are formed below the first interconnect element and on a second group of P-type doping regions over the semiconductor substrate. The second interconnect elements are electrically separated from the first interconnect element, and the first and second groups of P-type doping regions are separated by the STI region.