公开(公告)号：US20130105899A1

公开(公告)日：2013-05-02

申请号：US13719249

申请日：2012-12-19

Applicant: MEDIATEK INC.

Inventor： Tung-Hsing Lee ,  I-Cheng Lin ,  Wei-Li Tsao

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L21/823418 ,  H01L27/0266 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41775 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/7835

Abstract: An I/O electrostatic discharge (ESD) device having a gate electrode over a substrate, a gate dielectric layer between the gate electrode and the substrate, a pair of sidewall spacers respectively disposed on two opposite sidewalls of the gate electrode, a first lightly doped drain (LDD) region disposed under one of the sidewall spacers, a source region disposed next to the first LDD region, a second LDD region disposed under the other sidewall spacer, and a drain region disposed next to the second LDD region. The I/O ESD device has an asymmetric LDD configuration. In one embodiment, a junction of the second LDD region is shallower than that of the first LDD region.

Abstract translation: 一种在衬底上具有栅电极的I / O静电放电（ESD）器件，在栅电极和衬底之间的栅极电介质层，分别设置在栅电极的两个相对侧壁上的一对侧壁间隔物，第一轻掺杂 漏极（LDD）区域，设置在第一LDD区域旁边的源极区域，设置在另一侧壁间隔物下方的第二LDD区域和设置在第二LDD区域附近的漏极区域。 I / O ESD器件具有非对称LDD配置。 在一个实施例中，第二LDD区域的结点比第一LDD区域的结浅。