公开(公告)号：US11367788B2

公开(公告)日：2022-06-21

申请号：US16853889

申请日：2020-04-21

Applicant: MEDIATEK INC.

Inventor： Jing-Chyi Liao ,  Ching-Chung Ko ,  Zheng Zeng

IPC: H01L29/78

Abstract: A semiconductor device structure is provided. A first well region with a first type of conductivity is formed over a semiconductor substrate. A second well region with a second type of conductivity is formed over the semiconductor substrate. A well region is formed over the semiconductor substrate and between the first and second well regions. A first gate structure is disposed on the well region and partially over the first and second well regions. A drain region is in the first well region. A source region and a bulk region are in the second well region. The drain region, the source region and the bulk region have the first type of conductivity. A second gate structure is disposed on the second well region, and separated from the first gate structure by the source region and the bulk region.