公开(公告)号：US20230289063A1

公开(公告)日：2023-09-14

申请号：US18170096

申请日：2023-02-16

Applicant: MEDIATEK INC.

Inventor： Bo-Wei HSIEH ,  Chen-Chieh WANG ,  Szu-Ying CHENG ,  Jou-Ling CHEN

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0659 ,  G06F3/0673

Abstract: An electronic system is provided. A memory device includes a plurality of bank groups. A controller is coupled to the memory device and includes a request queue. The request queue is configured to store a plurality of requests. When the requests correspond to the different bank groups, the controller is configured to access data of the memory device according to a plurality of long burst commands corresponding to the requests. When the requests correspond to the same bank group, the controller is configured to access the data of the memory device according to a plurality of short burst commands corresponding to the requests. The short burst commands correspond to a short burst length, and the long burst commands correspond to a long burst length. The long burst length is twice the short burst length. The memory device is a low-power double data rate synchronous dynamic random access memory.

公开(公告)号：US20190074051A1

公开(公告)日：2019-03-07

申请号：US15995187

申请日：2018-06-01

Applicant: MEDIATEK INC.

Inventor： Chia-Fu CHANG ,  Hsiang-I HUANG ,  Bo-Wei HSIEH ,  Szu-Ying CHENG ,  Yu-Hsien TSAI

IPC: G11C11/406

Abstract: A refresh control method for a memory system is provided. The memory system includes a dynamic random access memory with a register set and a memory cell array. The refresh control method includes the following steps. Firstly, a masking command or an unmasking command is issued, and thus the register set is updated. A first region of the memory cell array is set as a masked region according to the masking command. A second region of the memory cell array is set as an unmasked region according to the unmasking command. Then, a refresh command is issued to the dynamic random access memory. According to the refresh command, a refresh action is performed on the second region of the memory cell array.