公开(公告)号：US20040038544A1

公开(公告)日：2004-02-26

申请号：US10420557

申请日：2003-04-22

申请人： MEMC Electronic Materials, Inc.

发明人： Guoqiang (David) Zhang ,  Henry Frank Erk ,  Tracy M. Ragan ,  Julie A. Kearns

IPC分类号： H01L021/302 ,  H01L021/461

CPC分类号： B24B37/08 ,  H01L21/302 ,  H01L21/30625

摘要： A method for polishing front and back surfaces of a semiconductor wafer includes the step of providing a polishing apparatus having a wafer carrier generally disposed between a first polishing pad and a second polishing pad. The first pad has a hardness significantly greater than a hardness of the second pad. The wafer is placed in the wafer carrier so that the front surface faces the first pad and so that the back surface faces the second pad. A polishing slurry is applied to at least one of the pads and the carrier, first pad and second pad are rotated. The front surface is brought into contact with the first pad and the back surface is brought into contact with the second pad for polishing the front and back surfaces of the wafer whereby less wafer material is removed from the back surface engaged by the second pad and the back surface has less gloss than the front surface after polishing so that the front surface and back surface are visually distinguishable.

摘要翻译： 一种用于抛光半导体晶片的前表面和后表面的方法包括提供具有通常设置在第一抛光垫和第二抛光垫之间的晶片载体的抛光装置的步骤。 第一垫具有显着大于第二垫的硬度的硬度。 将晶片放置在晶片载体中，使得前表面面向第一焊盘并且使得后表面面向第二焊盘。 将抛光浆料施加到至少一个焊盘和载体，第一焊盘和第二焊盘旋转。 前表面与第一焊盘接触，并且后表面与第二焊盘接触，用于抛光晶片的前表面和后表面，从而从与第二焊盘接合的后表面去除较少的晶片材料，并且 后表面在抛光后具有比前表面更少的光泽，使得前表面和后表面在视觉上可区分。