公开(公告)号：US20130082239A1

公开(公告)日：2013-04-04

申请号：US13631516

申请日：2012-09-28

Applicant: MICROLINK DEVICES, INC.

Inventor： Noren Pan ,  Victor C. Elarde ,  Christopher Youtsey ,  Mark Osowski

IPC: H01L33/46 ,  H01L33/06

CPC classification number: H01L33/0079

Abstract: A method of fabricating a light emitting diode using an epitaxial lift-off process includes forming a sacrificial layer on a substrate, forming a light emitting diode structure on the sacrificial layer with an epitaxial material, forming a light reflecting layer on the light emitting diode structure, and removing the sacrificial layer using an etching process to separate the substrate from the light emitting diode structure.

Abstract translation: 使用外延剥离工艺制造发光二极管的方法包括在衬底上形成牺牲层，在牺牲层上用外延材料形成发光二极管结构，在发光二极管结构上形成光反射层 ，并且使用蚀刻工艺去除牺牲层，以将衬底与发光二极管结构分离。