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1.发明授权Methods of forming a mask and methods of correcting intra-field variation across a mask design used in photolithographic processing 有权形成掩模的方法和校正在光刻处理中使用的掩模设计的场内变化的方法公开(公告)号：US08966409B2
公开(公告)日：2015-02-24
申请号：US13722909
申请日：2012-12-20
Applicant: Micron Technology, Inc.
Inventor： Yuan He , Hong Chen , David A. Kewley
IPC: G06F17/50
CPC classification number: G06F17/5068 , G03F1/70 , G03F1/78
Abstract: A method of forming a mask includes creating a difference map between a desired intra-field pattern that is to be formed on substrates and an intra-field signature pattern. The intra-field signature pattern represents a pattern formed on an example substrate by an exposure field using an example E-beam-written mask. Modifications are determined to formation of mask features to be made using an E-beam mask writer if forming a modified E-beam-written mask having mask features modified from that of the example E-beam-written mask that will improve substrate feature variation identified in the difference map. The E-beam mask writer is programmed using the determined modifications to improve the substrate feature variation identified in the difference map. It is used to form the modified E-beam-written mask having the modified mask features. One or more substrates are photolithographically processed using the modified E-beam-written mask.
Abstract translation: 形成掩模的方法包括在要形成在基板上的期望的场内图案和场内签名图案之间产生差分图。 场内签名图案表示通过使用示例电子束写入掩模的曝光场在示例基板上形成的图案。 确定修改以形成使用电子束掩模写入器进行的掩模特征，如果形成修改的电子束写入掩模，其具有从示例电子束写入掩模的掩模特征修改的掩模特征，该掩模特征将改善识别的基板特征变化 在差异地图中。 使用确定的修改来编程电子束掩模写入器以改善在差分图中识别的衬底特征变化。 它用于形成具有修改的掩模特征的经修改的电子束写入掩模。 使用经修改的电子束写入掩模对一个或多个基板进行光刻处理。
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2.发明申请Methods Of Forming A Mask And Methods Of Correcting Intra-Field Variation Across A Mask Design Used In Photolithographic Processing 有权形成掩模的方法和校正在光刻处理中使用的掩模设计的场内变化的方法公开(公告)号：US20140181763A1
公开(公告)日：2014-06-26
申请号：US13722909
申请日：2012-12-20
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Yuan He , Hong Chen , David A. Kewley
IPC: G06F17/50
CPC classification number: G06F17/5068 , G03F1/70 , G03F1/78
Abstract: A method of forming a mask includes creating a difference map between a desired intra-field pattern that is to be formed on substrates and an intra-field signature pattern. The intra-field signature pattern represents a pattern formed on an example substrate by an exposure field using an example E-beam-written mask. Modifications are determined to formation of mask features to be made using an E-beam mask writer if forming a modified E-beam-written mask having mask features modified from that of the example E-beam-written mask that will improve substrate feature variation identified in the difference map. The E-beam mask writer is programmed using the determined modifications to improve the substrate feature variation identified in the difference map. It is used to form the modified E-beam-written mask having the modified mask features. One or more substrates are photolithographically processed using the modified E-beam-written mask.
Abstract translation: 形成掩模的方法包括在要形成在基板上的期望的场内图案和场内签名图案之间产生差分图。 场内签名图案表示通过使用示例电子束写入掩模的曝光场在示例基板上形成的图案。 确定修改以形成使用电子束掩模写入器进行的掩模特征，如果形成修改的电子束写入掩模，其具有从示例电子束写入掩模的掩模特征修改的掩模特征，该掩模特征将改善识别的基板特征变化 在差异地图中。 使用确定的修改来编程电子束掩模写入器以改善在差分图中识别的衬底特征变化。 它用于形成具有修改的掩模特征的经修改的电子束写入掩模。 使用经修改的电子束写入掩模对一个或多个基板进行光刻处理。
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3.发明申请公开(公告)号：US20170357870A1
公开(公告)日：2017-12-14
申请号：US15609797
申请日：2017-05-31
Applicant: Micron Technology, Inc.
CPC classification number: G06K9/4604 , G06K9/6204 , G06T7/0006 , G06T2207/10061 , G06T2207/30148
Abstract: Methods and systems for descriptor guided fast marching method based image analysis and associated systems are disclosed. A representative image processing method includes processing an image of a microelectronic device using a fast marching algorithm to obtain arrival time information for the image. The arrival time information is analyzed using a targeted feature descriptor to identify targeted features. The detection of defects is facilitated by segmenting the image. The segmented image can be analyzed to identify targeted features which are then labeled for inspection.
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公开(公告)号：US11144778B2
公开(公告)日：2021-10-12
申请号：US16519508
申请日：2019-07-23
Applicant: Micron Technology, Inc.
Abstract: Methods and systems for descriptor guided fast marching method based image analysis and associated systems are disclosed. A representative image processing method includes processing an image of a microelectronic device using a fast marching algorithm to obtain arrival time information for the image. The arrival time information is analyzed using a targeted feature descriptor to identify targeted features. The detection of defects is facilitated by segmenting the image. The segmented image can be analyzed to identify targeted features which are then labeled for inspection.
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