公开(公告)号：US20230178142A1

公开(公告)日：2023-06-08

申请号：US17544219

申请日：2021-12-07

Applicant: Micron Technology, Inc.

Inventor： Christopher J. Kawamura ,  J. Wayne Thompson ,  Brenton Van Leeuwen

IPC: G11C11/408

CPC classification number: G11C11/4085

Abstract: Memory devices are disclosed. A device may include a number of word line drivers, wherein each word line driver of the number of word line drivers including a first transistor and a second transistor. The device may also include a number of first driver gates, wherein the first transistor of each word line driver has a gate coupled to a dedicated first driver gate of the number of driver gates. Further, the device may include a second driver gate coupled to a gate of each second transistor of each of the number of word line drivers. Associated circuits, methods, and systems are also disclosed.

公开(公告)号：US09190126B2

公开(公告)日：2015-11-17

申请号：US14094466

申请日：2013-12-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： J. Wayne Thompson ,  Howard C. Kirsch ,  Charles L. Ingalls

IPC: G01R19/00 ,  G11C7/12 ,  G11C7/06 ,  G11C11/4091 ,  G11C11/4094

CPC classification number: G11C7/12 ,  G11C7/06 ,  G11C7/065 ,  G11C11/4091 ,  G11C11/4094

Abstract: Sense amplifiers and methods for precharging are disclosed, including a sense amplifier having a pair of cross-coupled complementary transistor inverters, and a pair of transistors, each one of the pair of transistors coupled to a respective one of the complementary transistor inverters and a voltage. The sense amplifier further includes a capacitance coupled between the pair of transistors. One method for precharging includes coupling input nodes of the sense amplifier to a precharge voltage, coupling the input nodes of the sense amplifier together, and coupling a resistance to each transistor of a cross-coupled pair to set a voltage threshold (VT) mismatch compensation voltage for each transistor. The voltage difference between the VT mismatch compensation voltage of each transistor is stored.

Abstract translation: 公开了用于预充电的感测放大器和方法，包括具有一对交叉耦合的互补晶体管反相器的读出放大器和一对晶体管，耦合到互补晶体管反相器中的相应一个的一对晶体管中的每一个， 。 感测放大器还包括耦合在该对晶体管之间的电容。 一种用于预充电的方法包括将读出放大器的输入节点耦合到预充电电压，将读出放大器的输入节点耦合在一起，并将电阻耦合到交叉耦合对的每个晶体管，以设置电压阈值（VT）失配补偿 每个晶体管的电压。 存储每个晶体管的VT失配补偿电压之间的电压差。

公开(公告)号：US20140085992A1

公开(公告)日：2014-03-27

申请号：US14094466

申请日：2013-12-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： J. Wayne Thompson ,  Howard C. Kirsch ,  Charles L. Ingalls

IPC: G11C7/12 ,  G11C7/06

CPC classification number: G11C7/12 ,  G11C7/06 ,  G11C7/065 ,  G11C11/4091 ,  G11C11/4094

Abstract: Sense amplifiers and methods for precharging are disclosed, including a sense amplifier having a pair of cross-coupled complementary transistor inverters, and a pair of transistors, each one of the pair of transistors coupled to a respective one of the complementary transistor inverters and a voltage. The sense amplifier further includes a capacitance coupled between the pair of transistors. One method for precharging includes coupling input nodes of the sense amplifier to a precharge voltage, coupling the input nodes of the sense amplifier together, and coupling a resistance to each transistor of a cross-coupled pair to set a voltage threshold (VT) mismatch compensation voltage for each transistor. The voltage difference between the VT mismatch compensation voltage of each transistor is stored.

Abstract translation: 公开了用于预充电的感测放大器和方法，包括具有一对交叉耦合互补晶体管反相器的读出放大器和一对晶体管，耦合到互补晶体管反相器中的相应一个的一对晶体管中的每一个， 。 感测放大器还包括耦合在该对晶体管之间的电容。 一种用于预充电的方法包括将读出放大器的输入节点耦合到预充电电压，将读出放大器的输入节点耦合在一起，并将电阻耦合到交叉耦合对的每个晶体管，以设置电压阈值（VT）失配补偿 每个晶体管的电压。 存储每个晶体管的VT失配补偿电压之间的电压差。