公开(公告)号：US20140374685A1

公开(公告)日：2014-12-25

申请号：US14481411

申请日：2014-09-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jon Daley ,  Kristy A. campbell

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1246 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666

Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

Abstract translation: 一种相变存储元件及其形成方法。 存储元件包括第一和第二电极。 第一层相变材料位于第一和第二电极之间。 包括金属 - 硫族化物材料的第二层也在第一和第二电极之间，并且是相变材料和导电材料之一。 绝缘层位于第一和第二层之间。 绝缘层中至少有一个开口提供第一和第二层之间的接触。