公开(公告)号：US09147838B2

公开(公告)日：2015-09-29

申请号：US14481411

申请日：2014-09-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jon Daley ,  Kristy A. Campbell

IPC: H01L47/00 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1246 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666

Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

Abstract translation: 一种相变存储元件及其形成方法。 存储元件包括第一和第二电极。 第一层相变材料位于第一和第二电极之间。 包括金属 - 硫族化物材料的第二层也在第一和第二电极之间，并且是相变材料和导电材料之一。 绝缘层位于第一和第二层之间。 绝缘层中至少有一个开口提供第一和第二层之间的接触。

公开(公告)号：US20140038425A1

公开(公告)日：2014-02-06

申请号：US14044304

申请日：2013-10-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jon Daley ,  Yoshiki Hishiro

IPC: H01L21/033

CPC classification number: H01L21/0335 ,  G03F7/40

Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.

Abstract translation: 公开了一种用于处理光致抗蚀剂图案的稳定溶液以及防止轮廓异常，倾倒和抵抗基脚的方法。 稳定溶液包含非挥发性组分，例如在光致抗蚀剂材料已经显影之后施加的非挥发性颗粒或聚合物。 通过在显影之后但干燥之前用含有非挥发性成分的溶液处理光致抗蚀剂，非挥发性组分填充相邻抗蚀剂图案之间的空间，并在干燥期间保留在基材上。 非挥发性组分为抗蚀剂提供结构和机械支撑，以防止液体表面张力产生变形或塌陷。

公开(公告)号：US08956981B2

公开(公告)日：2015-02-17

申请号：US14044304

申请日：2013-10-02

Applicant: Micron Technology, Inc.

Inventor： Jon Daley ,  Yoshiki Hishiro

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/033 ,  G03F7/40

CPC classification number: H01L21/0335 ,  G03F7/40

Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.

Abstract translation: 公开了一种用于处理光致抗蚀剂图案的稳定溶液以及防止轮廓异常，倾倒和抵抗基脚的方法。 稳定溶液包含非挥发性组分，例如在光致抗蚀剂材料已经显影之后施加的非挥发性颗粒或聚合物。 通过在显影之后但干燥之前用含有非挥发性成分的溶液处理光致抗蚀剂，非挥发性组分填充相邻抗蚀剂图案之间的空间，并在干燥期间保留在基材上。 非挥发性组分为抗蚀剂提供结构和机械支撑，以防止液体表面张力产生变形或塌陷。

公开(公告)号：US20140374685A1

公开(公告)日：2014-12-25

申请号：US14481411

申请日：2014-09-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jon Daley ,  Kristy A. campbell

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1246 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666

Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

Abstract translation: 一种相变存储元件及其形成方法。 存储元件包括第一和第二电极。 第一层相变材料位于第一和第二电极之间。 包括金属 - 硫族化物材料的第二层也在第一和第二电极之间，并且是相变材料和导电材料之一。 绝缘层位于第一和第二层之间。 绝缘层中至少有一个开口提供第一和第二层之间的接触。

公开(公告)号：US20130248810A1

公开(公告)日：2013-09-26

申请号：US13889777

申请日：2013-05-08

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu ,  Mike Violette ,  Jon Daley

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2463 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1691

Abstract: A memory element and method of forming the same. The memory element includes a substrate supporting a first electrode, a dielectric layer over the first electrode having a via exposing a portion of the first electrode, a phase change material layer formed over sidewalls of the via and contacting the exposed portion of the first electrode, insulating material formed over the phase change material layer and a second electrode formed over the insulating material and contacting the phase change material layer.

Abstract translation: 记忆元件及其形成方法。 存储元件包括支撑第一电极的基板，在第一电极上的电介质层，具有暴露第一电极的一部分的通孔，形成在通孔的侧壁上并与第一电极的暴露部分接触的相变材料层， 形成在相变材料层上的绝缘材料和形成在绝缘材料上并与相变材料层接触的第二电极。