公开(公告)号：US20230326852A1

公开(公告)日：2023-10-12

申请号：US17714797

申请日：2022-04-06

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Harunobu Kondo ,  Kazuteru Ishizuka ,  Wataru Nobehara ,  Ryosuke Yatsushiro ,  Makoto Saito

IPC: H01L23/528 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L23/5226

Abstract: Disclosed herein is an apparatus that includes a semiconductor substrate having a main surface extending in a first direction and a second direction different from the first direction and a conductive pattern formed over the main surface of the semiconductor substrate. The conductive pattern includes a first section extending in the first direction, a second section extending in the second direction, and a third section connected between the first and second sections. The third section of the conductive pattern has a first slit extending in a third direction different from the first and second directions.

公开(公告)号：US11764152B1

公开(公告)日：2023-09-19

申请号：US17714797

申请日：2022-04-06

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Harunobu Kondo ,  Kazuteru Ishizuka ,  Wataru Nobehara ,  Ryosuke Yatsushiro ,  Makoto Saito

IPC: H01L23/528 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L23/5226

Abstract: Disclosed herein is an apparatus that includes a semiconductor substrate having a main surface extending in a first direction and a second direction different from the first direction and a conductive pattern formed over the main surface of the semiconductor substrate. The conductive pattern includes a first section extending in the first direction, a second section extending in the second direction, and a third section connected between the first and second sections. The third section of the conductive pattern has a first slit extending in a third direction different from the first and second directions.