公开(公告)号：US10037807B2

公开(公告)日：2018-07-31

申请号：US15690862

申请日：2017-08-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Akira Goda ,  Mason A. Jones

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3427

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

公开(公告)号：US20170365343A1

公开(公告)日：2017-12-21

申请号：US15690862

申请日：2017-08-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Akira Goda ,  Mason A. Jones

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3427

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

公开(公告)号：US10242744B2

公开(公告)日：2019-03-26

申请号：US16048506

申请日：2018-07-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Akira Goda ,  Mason A. Jones

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/34

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

公开(公告)号：US20160372201A1

公开(公告)日：2016-12-22

申请号：US14740685

申请日：2015-06-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Akira Goda ,  Mason A. Jones

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3427

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

Abstract translation: 一种用于对非易失性存储器件进行编程的方法包括同时提升所选择的存储器串中的存储器单元的通道和存储器件的未选择的存储器串，对所选存储器串中的存储单元的升压通道进行放电， 在所选择的存储器串中对升压通道进行放电之后，所选择的存储器串中的存储器单元。

公开(公告)号：US20180336951A1

公开(公告)日：2018-11-22

申请号：US16048506

申请日：2018-07-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Akira Goda ,  Mason A. Jones

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3427

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

公开(公告)号：US09779817B2

公开(公告)日：2017-10-03

申请号：US14740685

申请日：2015-06-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Violante Moschiano ,  Akira Goda ,  Mason A. Jones

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3427

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.