公开(公告)号：US08728921B2

公开(公告)日：2014-05-20

申请号：US13960855

申请日：2013-08-07

Applicant: Micron Technology, Inc.

Inventor： Alan G. Wood ,  Tim Corbett

IPC: H01L21/26

CPC classification number: H01L21/22 ,  H01L21/268 ,  H01L21/3221 ,  H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated circuits and circuitry on the circuit side; thinning the substrate from the back side to a selected thickness to form a thinned substrate; applying a dopant to the back side of the thinned substrate; and laser processing the back side of the thinned substrate to form a plurality of patterns of lasered features containing the dopant. The dopant can be selected to modify properties of the semiconductor substrate such as carrier properties, gettering properties, mechanical properties or visual properties.

Abstract translation: 一种制造半导体元件的方法包括以下步骤：在电路侧提供具有电路侧，背面和集成电路和电路的半导体衬底; 将基板从背面变薄至选定的厚度以形成薄的基板; 将掺杂剂施加到所述薄化基板的背面; 以及激光处理所述薄化衬底的背面以形成包含所述掺杂剂的多个激光特征图案。 可以选择掺杂剂来改善半导体衬底的性质，例如载体性质，吸气性能，机械性能或视觉性能。

公开(公告)号：US20130323909A1

公开(公告)日：2013-12-05

申请号：US13960855

申请日：2013-08-07

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Alan G. Wood ,  Tim Corbett

IPC: H01L21/22

CPC classification number: H01L21/22 ,  H01L21/268 ,  H01L21/3221 ,  H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated circuits and circuitry on the circuit side; thinning the substrate from the back side to a selected thickness to form a thinned substrate; applying a dopant to the back side of the thinned substrate; and laser processing the back side of the thinned substrate to form a plurality of patterns of lasered features containing the dopant. The dopant can be selected to modify properties of the semiconductor substrate such as carrier properties, gettering properties, mechanical properties or visual properties.

Abstract translation: 一种制造半导体元件的方法包括以下步骤：在电路侧提供具有电路侧，背面和集成电路和电路的半导体衬底; 将基板从背面变薄至选定的厚度以形成薄的基板; 将掺杂剂施加到所述薄化基板的背面; 以及激光处理所述薄化衬底的背面以形成包含所述掺杂剂的多个激光特征图案。 可以选择掺杂剂来改善半导体衬底的性质，例如载体性质，吸气性能，机械性能或视觉性能。