公开(公告)号：US20110080780A1

公开(公告)日：2011-04-07

申请号：US12969526

申请日：2010-12-15

Applicant: MING-HSIU LEE ,  YI CHOU CHEN

Inventor： MING-HSIU LEE ,  YI CHOU CHEN

IPC: G11C11/00

CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2013/0092

Abstract: A method of programming a phase change device includes selecting a desired threshold voltage (Vth) and applying a programming pulse to a phase change material in the phase change device. The applying of the programming pulse includes applying a quantity of energy to the phase change material to drive at least a portion of this material above a melting energy level. A portion of the energy applied to the phase change material is allowed to dissipate below the melting energy level. The shape of the energy dissipation from the phase change material is controlled until the energy applied to the phase change material is less than a quenched energy level, to cause the phase change device to have the desired Vth. A remaining portion of the energy applied to the phase change material is allowed to dissipate to an environmental level.

Abstract translation: 编程相变装置的方法包括选择期望的阈值电压（Vth）并将编程脉冲施加到相变装置中的相变材料。 应用编程脉冲包括向相变材料施加一定量的能量以将该材料的至少一部分驱动在熔化能级以上。 施加到相变材料的能量的一部分被允许消散在熔融能级以下。 控制来自相变材料的能量耗散的形状，直到施加到相变材料的能量小于淬火能量水平，以使相变装置具有期望的Vth。 施加到相变材料的能量的剩余部分被允许消散到环境水平。